BFS520 Philips Semiconductors (Acquired by NXP), BFS520 Datasheet - Page 5

• Manufacturer Part Number: BFS520
• Description: BFS520; NPN 9 GHZ Wideband Transistor;; Package: SOT323 (UMT3, CMPAK)
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
In Figs 6 to 9, G
MSG = maximum stable gain; G
gain.
September 1995
handbook, halfpage
handbook, halfpage
NPN 9 GHz wideband transistor
G UM
V
Fig.6
I
(dB)
C
CE
gain
(dB)
= 5 mA; V
= 6 V; f = 900 MHz; T
50
40
30
20
10
20
18
16
14
12
10
10
0
Fig.8 Gain as a function of frequency.
0
2
Maximum unilateral power gain as a
function of collector current.
CE
= 6 V; T
UM
= maximum unilateral power gain;
10
10
amb
MSG
G UM
amb
1
= 25 C.
= 25 C.
20
max
1
I C (mA)
= maximum available
G max
f (GHz)
V
CE
30
MRC027
= 6 V
MRC024
3 V
10
5
handbook, halfpage
handbook, halfpage
V
I
gain
C
(dB)
CE
gain
= 20 mA; V
(dB)
Fig.7 Gain as a function of collector current.
= 6 V; f = 2 GHz; T
25
20
15
10
50
40
30
20
10
5
0
0
10
0
Fig.9 Gain as a function of frequency.
2
CE
= 6 V; T
MSG
10
amb
10
amb
G UM
= 25 C.
1
= 25 C.
20
I C (mA)
1
Product specification
G max
f (GHz)
30
BFS520
MRC026
MRC025
G max
G UM
MSG
10