BYS10 Vishay Intertechnology, BYS10 Datasheet - Page 2

• Manufacturer Part Number: BYS10
• Manufacturer: Vishay Intertechnology

Characteristics (T
Figure 2. Max. Reverse Current vs. Junction Temperature
BYS10
Vishay Semiconductors
www.vishay.com
2 (4)
95 9710
95 9711
95 9712
Figure 1. Max. Reverse Power Dissipation vs.
1000
Figure 3. Max. Average Forward Current vs.
100
0.1
2.0
1.6
1.2
0.8
0.4
10
7
6
5
4
3
2
1
0
1
0
0
0
0
V
BYS10-35
R
= V
T
40
40
40
amb
T
Junction Temperature
T
Ambient Temperature
R
R RM
BYS10-45
j
j
thJA
– Junction Temperature ( C )
– Junction Temperature ( C )
– Ambient Temperature ( C )
, Half Sinewave, R
=25K/W
80
80
80
j
= 25 _ C unless otherwise specified)
BYS10-25
120
120
120
R
thJA
V
thJA
BYS10-45
R
BYS10-25
BYS10-35
= V
=100K/W
=25K/W
160
160
160
R RM
200
200
200
95 9713
95 9714
16468
Figure 5. Max. Forward Current vs. Forward Voltage
Figure 6. Diode Capacitance vs. Reverse Voltage
Figure 4. Max. Average Forward Current vs.
0.01
350
300
250
200
150
100
100
2.0
1.6
1.2
0.8
0.4
0.1
50
10
0
0
1
0.1
0
0
125K/W
T
0.4
40
amb
Ambient Temperature
T
j
V
V
= 150 C
– Ambient Temperature ( C )
T
F
R
j
1.0
– Forward Voltage ( V )
150K/W
= 25 C
– Reverse Voltage ( V )
V
0.8
80
R
100K/W
= 0 V, Half Sinewave
120
1.2
10.0
Document Number 86013
R
thJA
f=1MHz
160
=25K/W
1.6
Rev. 3, 08-Sep-00
100.0
200
2.0