1PS70SB10 Philips Semiconductors (Acquired by NXP), 1PS70SB10 Datasheet - Page 3

• Manufacturer Part Number: 1PS70SB10
• Description: 1PS70SB10; 1PS70SB14; 1PS70SB15; 1PS70SB16; Schottky Barrier (double) Diodes;; Package: SOT323 (UMT3, CMPAK)
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
T
Note
1. Pulse test: t
THERMAL CHARACTERISTICS
Note
1. Refer to SOT323 (SC70) standard mounting conditions.
1999 Apr 26
Per diode
V
I
I
I
P
T
T
T
Per diode
V
I
C
R
SYMBOL
SYMBOL
SYMBOL
F
FRM
FSM
amb
R
stg
j
amb
R
tot
F
d
th j-a
Schottky barrier (double) diodes
= 25 C unless otherwise specified.
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation (per package)
storage temperature
junction temperature
operating ambient temperature
continuous forward voltage
continuous reverse current
diode capacitance
thermal resistance from junction to ambient
p
= 300 s; = 0.02.
PARAMETER
PARAMETER
PARAMETER
t
t
T
see Fig.6
V
V
note 1
3
p
p
amb
R
R
< 10 ms
I
I
I
I
I
F
F
F
F
F
= 25 V; note 1; see Fig.7
= 1 V; f = 1 MHz; see Fig.8
1 s;
= 0.1 mA
= 1 mA
= 10 mA
= 30 mA
= 100 mA
< 25 C
CONDITIONS
CONDITIONS
CONDITIONS
0.5
1PS70SB10; 1PS70SB14;
1PS70SB15; 1PS70SB16
240
320
400
500
800
2
10
MIN.
65
65
VALUE
MAX.
625
Product specification
30
200
300
600
200
+150
125
+125
MAX.
mV
mV
mV
mV
mV
pF
A
UNIT
UNIT
K/W
V
mA
mA
mA
mW
C
C
C
UNIT