1PS76SB70 Philips Semiconductors (Acquired by NXP), 1PS76SB70 Datasheet - Page 3
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1PS76SB70
Manufacturer Part Number
1PS76SB70
Description
1PS76SB70; Schottky Barrier Diode;; Package: SOD323 (UMD2, I-IEIA, URP)
Manufacturer
Philips Semiconductors (Acquired by NXP)
Datasheet
1.1PS76SB70.pdf
(8 pages)
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Philips Semiconductors
ELECTRICAL CHARACTERISTICS
T
Note
1. Pulsed test: t
THERMAL CHARACTERISTICS
Note
1. Refer to SOD323 standard mounting conditions.
1998 Jul 16
V
I
C
R
SYMBOL
SYMBOL
amb
R
F
d
th j-a
Schottky barrier diode
= 25 C unless otherwise specified.
continuous forward voltage
continuous reverse current
diode capacitance
thermal resistance from junction to ambient
p
= 300 s; = 0.02.
PARAMETER
PARAMETER
see Fig.2
V
V
V
note 1
3
R
R
R
I
I
I
F
F
F
= 50 V; note 1; see Fig.3
= 70 V; note 1; see Fig.3
= 0 ; f = 1 MHz; see Fig.5
= 1 mA
= 10 mA
= 15 mA
CONDITIONS
CONDITIONS
410
750
1
100
10
2
VALUE
MAX.
450
1PS76SB70
Product specification
mV
mV
V
nA
pF
A
UNIT
UNIT
K/W