1PS79SB70 Philips Semiconductors (Acquired by NXP), 1PS79SB70 Datasheet - Page 3

• Manufacturer Part Number: 1PS79SB70
• Description: 1PS79SB70; Schottky Barrier Diode;; Package: SOD523 (I-IGIA, UFP)
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
ELECTRICAL CHARACTERISTICS
T
Note
1. Pulsed test: t
THERMAL CHARACTERISTICS
Note
1. Refer to SC-79 standard mounting conditions.
1998 Jul 16
V
I
C
R
SYMBOL
SYMBOL
amb
R
F
d
th j-a
Schottky barrier diode
= 25 C unless otherwise specified.
forward voltage
reverse current
diode capacitance
thermal resistance from junction to ambient
p
= 300 s; = 0.02.
PARAMETER
PARAMETER
see Fig.2
V
V
f = 1 MHz; V
R
R
I
I
I
F
F
F
= 50 V; note 1; see Fig.3
= 70 V; note 1; see Fig.3
note 1
3
= 1 mA
= 10 mA
= 15 mA
R
CONDITIONS
= 0; see Fig.5
CONDITIONS
1PS79SB70
Product specification
410
750
1
100
10
2
VALUE
MAX.
450
mV
mV
V
nA
pF
A
UNIT
UNIT
K/W