IXS839S1T-R Clare, Inc., IXS839S1T-R Datasheet - Page 5
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IXS839S1T-R
Manufacturer Part Number
IXS839S1T-R
Description
Synchronous Buck Mosfet Driver
Manufacturer
Clare, Inc.
Datasheet
1.IXS839S1T-R.pdf
(13 pages)
Electrical Characteristics
*Notes:
High Side Gate Driver Circuit
Parameter
High Side Gate-Driver
On-Resistance, Sourcing
Current
High Side Gate-Driver
On-Resistance, Sinking
Current
High Side Gate-Driver
Rise-Time
High Side Gate-Driver
Fall-Time
Propagation Delay
Low Side Gate Driver Circuit
Parameter
Low Side Gate-Driver
On-Resistance, Sourcing
Current
Low Side Gate-Driver
On-Resistance, Sinking
Current
Low Side Gate-Driver
Rise-Time
Low Side Gate-Driver
Fall-Time
Propagation Delay
Shut Down Circuit Characteristics
Parameter
Propagation Delay
Propagation Delay
Propagation Delay
Propagation Delay
(1) See Timing Diagram in Figure 4
(2) See Timing Diagram in Figure 5
(3) See Timing Diagram in Figure 6
IXYS
(1)
(1)
(2)
(2)
(3)
(3)
(1)
(1)
(1)
(1)
R
R
t
t
t
t
R
R
t
t
t
t
t
t
t
t
R_HGD
F_HGD
PD_HGD1
PD_HGD2
R_LGD
F_LGD
PD_LGD1
PD_LGD2
PD_LGDSD1
PD_LGDSD2
PD_GDSD1
PD_GDSD2
Symbol
Symbol
Symbol
HGD_SRC
HGD_SNK
LGD_SRC
LGD_SNK
V
V
C
T
90% of (V
C
T
10% of (V
C
C
V
V
C
T
90% of (V
C
T
10% of (V
C
C
R_HGD
F_HGD
R_LGD
F_LGD
BST
BST
DD
DD
LOAD
LOAD
LOAD_HGD
DLY
LOAD
LOAD
LOAD_HGD
DLY
– V
– V
– V
– V
= 0pF
= 0pF
= 3nF
= 3nF
= 3nF
= 3nF
measured from 90% to
measured from 10% to
measured from 90% to
measured from 10% to
PGND
PGND
SW
SW
Conditions
Conditions
Conditions
HGD
HGD
LGD
LGD
= C
= C
= 4.6V
= 4.6V
= 4.6V
= 4.6V
5
– V
- V
- V
- V
LOAD_LGD
LOAD_LGD
SW
SW
SW
PGND
)
)
)
)
= 3nF
= 3nF
T
T
T
A
A
A
IXS839 / IXS839A / IXS839B
= -40°C to 85°C, V
= -40°C to 85°C, V
= -40°C to 85°C, V
Min
Min
Min
Typ
Typ
Typ
400
800
25
10
DD
DD
DD
= 5V, 4V < V
= 5V, 4V < V
= 5V, 4V < V
1200
Max
Max
Max
800
2.2
1.2
20
15
35
50
18
12
60
20
50
20
2
1
BST
BST
BST
< 26V
< 26V
Unit
Unit
Unit
< 26V
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
Ω
Ω
Ω
Ω