FMM5822X Eudyna Devices, Inc., FMM5822X Datasheet

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FMM5822X

Manufacturer Part Number
FMM5822X
Description
K-Band Power Amplifier MMIC
Manufacturer
Eudyna Devices, Inc.
Datasheet

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Part Number:
FMM5822X
Manufacturer:
Sumitomo
Quantity:
1 400
Edition 2.1
November 2004
ABSOLUTE MAXIMUM RATING
Drain-Source Voltage
Gate-Source Voltage
Input Power
Strage Temperature
RECOMMENDED OPERATING CONDITIONS
Drain-Source Voltage
Input Power
Operating Backside Temperature
* : FMM5822X/001 Recommended Drain-Source Voltage VDD≦8V
This Product should be hermetically packaged.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25℃)
Frequency Range
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Power Added Efficiency at 1dB G.C.P.
Third Order Intermodulation
Drain Current at 1dB G.C.P.
Input Return Loss at Pin=-20dBm
Output Return Loss at Pin=-20dBm
Note : RF parameter sample size 10ps. Criteria (accept/reject)=(0/1)
ESD
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)
FEATURES
•High Output Power; P1dB = 32.5 dBm (Typ.)
•High Linear Gain; GL = 22 dB(Typ.)
•Frequency Band ; 17.5 - 20.0 GHz
•High Linearity ; OIP3 = 41dBm
•Impedance Matched Zin/Zout = 50
DESCRIPTION
The FMM5822X is a power amplifier MMIC that contains a three
stage amplifier, internally matched, for standard communications
band in 17.5 to 20.0GHz frequency range. This product is well
suited for point-to-point radio applications.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
Item
Item
Item
Symbol
Symbol
Stmbol
RLout
G1dB
P1dB
IM3*
VDD
VGG
VDD
Nadd
Iddrf
RLin
Tstg
Top
Pin
Pin
f
1
VDD=6.0V
IDD(DC)=850mA typ.
Zs=Zl=50ohm
*df=10MHz,Po=20.5dBm   
                    (S.C.L.)
Class 0
Test Conditions
Condition
Condition
K-Band Power Amplifier MMIC
Min.
17.5
30.5
G.C.P. : Gain Compression Point
-38
Device photo
19
-
-
-
-
Recommended
  -55 to +125
  -40 to +85
S.C.L. : Single Carrier Level
FMM5822X
~ 199V
Rating
Limits
≦7*
1000
Typ.
32.5
-41
-12
10
25
15
21
30
-3
-8
-
Max.
1500
20
25
-
-
-
-
-
dBm
dBm
dBm
Unit
Unit
Unit
GHz
dBc
mA
dB
dB
dB
%
V
V
V

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FMM5822X Summary of contents

Page 1

... Band ; 17.5 - 20.0 GHz •High Linearity ; OIP3 = 41dBm •Impedance Matched Zin/Zout = 50 DESCRIPTION The FMM5822X is a power amplifier MMIC that contains a three stage amplifier, internally matched, for standard communications band in 17.5 to 20.0GHz frequency range. This product is well suited for point-to-point radio applications. ...

Page 2

... FMM5822X K-Band Power Amplifier MMIC Output Power vs. Frequency VDD=6V, IDD(DC)=850mA 16.5 17 17.5 18 18.5 19 Frequency [GHz] Power Added Efficiency vs. Frequency VDD=6V, IDD(DC)=850mA 16.5 17 17.5 18 18.5 19 Frequency [GHz] Output Power, Drain Current vs. Input Power 34 Pin = 12dBm ...

Page 3

... VDD=6V, IDD(DC)=850mA, Pout=20dBm S.C.L. -30 -35 -40 IM3 -45 -50 IM5 -55 -60 16.5 17 17.5 18 18.5 19 19.5 20 20.5 21 21.5 Frequency [GHz] K-Band Power Amplifier MMIC IMD vs. Output Power VDD=6V, IDD(DC)=850mA -15 17.5GHz -20 18.5GHz 20GHz -25 -30 -35 -40 IM3 -45 -50 -55 - 2-tone Total Output Power [dBm] 3 FMM5822X IM5 ...

Page 4

... FMM5822X K-Band Power Amplifier MMIC Output Power, Drain Current vs. Input Power by Drain Voltage IDD(DC)=850mA, f=17.5GHz Pout Drain Current Input Power [dBm] Output Power, Drain Current vs. Input Power by Drain Voltage IDD(DC)=850mA, f=20 ...

Page 5

... FMM5822X VDD=6V, f=18.5GHz Pout Drain Current Input Power [dBm] VDD=6V P1dB G1dB 800 900 1000 1100 IDD(DC) [mA] 2100 1900 1700 1500 1300 ...

Page 6

... FMM5822X K-Band Power Amplifier MMIC IMD vs. Output Power by Drain Voltage IDD(DC)=850mA, f=17.5GHz - - - -30 -35 -40 -45 IM3 -50 IM5 -55 - 2-tone Total Output Power [dBm] IMD vs. Output Power by Drain Voltage IDD(DC)=850mA, f=20.0GHz - - ...

Page 7

... Total Output Power [dBm] -15 -20 -25 -30 -35 -40 -45 -50 -55 - FMM5822X K-Band Power Amplifier MMIC IMD vs. Output Power by Drain Current VDD=6V, f=18.5GHz 650mA 850mA 1050mA IM3 IM5 2-tone Total Output Power [dBm ...

Page 8

... FMM5822X K-Band Power Amplifier MMIC ■S-PARAMETER 30 S21 25 S11 20 S22 -10 -15 -20 -25 - -10 -15 -20 -25 -30 16 16.5 17 17.5 18 18.5 19 19 Frequency [GHz] S21 S11 S22 Frequency [GHz ...

Page 9

... FMM5822X K-Band Power Amplifier MMIC S22 MAG ANG 0.99 -44.1 0.94 -80.3 0.92 -102.7 0.96 -121.7 0.98 -137.4 0.98 -150.8 0.97 -162.1 0.96 -172.0 0.95 177.9 0.93 167.5 0.90 156.2 0.86 142.7 0.79 125.8 0.66 103.2 0.45 72.4 0.20 25.0 0.13 -93.4 0.14 -104.1 0.15 -112.5 0.16 -119.7 0.17 -126.9 0.19 -132.7 0.20 -140.4 0.21 -146.6 0.21 -153.6 0.22 -159.3 0.22 -164.7 0.23 -170.8 0.23 -176.3 0.24 178.5 ...

Page 10

... FMM5822X K-Band Power Amplifier MMIC 1.E+12 1.E+11 1.E+10 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 1.E+04 1.E+03 1.E+02 1.E+01 50 ΔTch vs. Drain Voltage (Reference) IDD(DC)=900mA VDD [V] MTTF vs. Tch 100 150 o Tch [ Ea=1.56eV 200 250 ...

Page 11

... 1155 750 1155 Chip Size : 3570 Chip Thickness : 70±20um Bonding Pad Size : RF-Pad : 120um x 80um VGG-Pad : 80um x 80um VDD-Pad : 100um x 100um 11 FMM5822X K-Band Power Amplifier MMIC 3450 3075 3570 2760 2510 1380 250 0 3075 3450 ...

Page 12

... FMM5822X K-Band Power Amplifier MMIC ■ Assembly Diagrams Recommended assembly 1 uF VGG 50ohm Line “Copper” is the recommended material for the package or carrier. 100pF 100pF 100pF 100pF 100pF VDD 50ohm Line VDD 100pF 1 uF ...

Page 13

... Method : Thermal Compression Bonding with Ultrasonic Power Tool Force : 0.196 N ± 0.0196 N Stage Temperature : 215 deg.C ± 5 deg.C Tool Heater : None Ultrasonic Power Transmitter : West Bond Model 1400 Duration : 150 mS/Bond FMM5822X Area of Chip Bach Surface (mm^2) 13 FMM5822X K-Band Power Amplifier MMIC ...

Page 14

... FMM5822X K-Band Power Amplifier MMIC For further information please contact : Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom ...

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