BC847BVN Philips Semiconductors, BC847BVN Datasheet
BC847BVN
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BC847BVN Summary of contents
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... DISCRETE SEMICONDUCTORS DATA SHEET BC847BVN NPN/PNP general purpose transistor Product specification Supersedes data of 2001 Aug 30 M3D744 2001 Nov 07 ...
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... MARKING CODE Fig.1 13 CONDITIONS open emitter open base open collector note 1 amb note 1 amb 2 Product specification BC847BVN DESCRIPTION emitter TR1; TR2 base TR1; TR2 collector TR1; TR2 TR1 MAM443 Top view Simplified outline (SOT666) and symbol. ...
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... 1MHz 500 mV 1MHz Product specification BC847BVN VALUE UNIT 416 K/W MIN. TYP. MAX. UNIT 100 nA 200 450 100 mV 300 mV 755 mV 100 MHz ...
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... I C (mA) TR1 (NPN); I (1) T amb (2) T amb (3) T amb Fig.5 4 Product specification BC847BVN (1) (2) ( 150 C. Base-emitter voltage as a function of collector current; typical values. (1) (2) ( ...
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... V BEsat (mV) 1000 (1) (2) 800 (3) 600 400 200 20 amb = 25 C. amb = 150 C. amb Base-emitter saturation voltage as a function of collector current. Product specification BC847BVN MLD700 (mA) MLD702 (mA) ...
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... UNIT 0.6 0.27 0.18 1.7 mm 0.5 0.17 0.08 1.5 OUTLINE VERSION IEC SOT666 2001 Nov scale 1.3 1.7 0.3 1.0 0.5 1.1 1.5 0.1 REFERENCES JEDEC EIAJ 6 Product specification BC847BVN detail 0.1 0.1 EUROPEAN PROJECTION SOT666 X c ISSUE DATE 01-01-04 01-08-27 ...
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... Product specification BC847BVN DEFINITIONS These products are not Philips Semiconductors ...
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... Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. ...