BC847BVN Philips Semiconductors, BC847BVN Datasheet - Page 3

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BC847BVN

Manufacturer Part Number
BC847BVN
Description
NPN/PNP general purpose transistor
Manufacturer
Philips Semiconductors
Datasheet

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Philips Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering is reflow soldering.
CHARACTERISTICS
T
Note
1. Pulse test: t
2001 Nov 07
R
Per transistor; for the PNP transistor with negative polarity
I
I
h
V
V
f
NPN transistor
V
C
C
PNP transistor
V
C
C
SYMBOL
SYMBOL
amb
CBO
EBO
T
FE
CEsat
BEsat
BE
BE
th j-a
c
e
c
e
NPN/PNP general purpose transistor
= 25 C unless otherwise specified.
thermal resistance from junction to ambient
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
collector-emitter saturation
voltage
transition frequency
base-emitter turn-on voltage
collector capacitance
emitter capacitance
base-emitter turn-on voltage
collector capacitance
emitter capacitance
p
300 s;
PARAMETER
PARAMETER
0.02.
V
V
V
V
I
I
I
I
V
V
V
V
V
V
C
C
C
C
CB
CB
EB
CE
CE
CB
EB
CE
CB
EB
= 10 mA; I
= 100 mA; I
= 10 mA; I
= 10 mA; V
= 30 V; I
= 30 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 10 V; I
= 500 mV; I
= 5 V; I
= 10 V; I
= 500 mV; I
CONDITIONS
C
C
C
3
E
E
B
B
E
C
= 0
= 2 mA
= 2 mA
notes 1 and 2
CE
B
C
= 0
= 0; T
= 0.5 mA
= 0.5 mA
= I
= 2 mA
= 5 mA; note 1
C
= I
= 5 V; f = 100 MHz
e
E
= I
CONDITIONS
c
= 0; f = 1MHz
= I
= 0; f = 1MHz
c
j
= 150 C
e
= 0; f = 1MHz
= 0; f = 1MHz
200
100
580
600
MIN.
VALUE
416
755
655
11
655
10
TYP.
Product specification
BC847BVN
15
5
100
450
100
300
700
1.5
750
2.2
MAX.
UNIT
K/W
nA
nA
mV
mV
mV
MHz
mV
pF
pF
mV
pF
pF
UNIT
A

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