2SC3110 Inchange, 2SC3110 Datasheet
2SC3110
Manufacturer Part Number
2SC3110
Description
Silicon Power Transistor
Manufacturer
Inchange
Datasheet
1.2SC3110.pdf
(2 pages)
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2SC3110
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PANASONIC
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2SC3110
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PANASONIC/松下
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PANASONIC/松下
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INCHANGE Semiconductor
isc
DESCRIPTION
·Low Noise
·High Gain
·High Current-Gain Bandwidth Product
APPLICATIONS
·Designed for use in RF wide band low noise amplifier.
ABSOLUTE MAXIMUM RATINGS(T
isc Website：www.iscsemi.cn
SYMBOL
V
V
V
T
I
P
T
CBO
CEO
EBO
I
CP
stg
C
C
J
Silicon NPN RF Transistor
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Collector Power Dissipation
@T
Junction Temperature
Storage Temperature Range
C
=25℃
PARAMETER
a
=25
℃)
-55~150
VALUE
150
2.5
0.2
15
12
30
50
UNIT
mA
mA
W
℃
℃
V
V
V
isc
RF Product Specification
2SC3110
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2SC3110 Summary of contents
Page 1
... Emitter-Base Voltage EBO I Collector Current-Continuous C I Collector Current-Peak CP Collector Power Dissipation =25℃ Junction Temperature J Storage Temperature Range T stg isc Website：www.iscsemi.cn isc ℃) =25 a VALUE UNIT 2 0.2 W ℃ 150 ℃ -55~150 RF Product Specification 2SC3110 ...
Page 2
... RF Product Specification CONDITIONS V = 10V 2V 10mA ; V = 10V -10mA ; V = 10V 10V; f= 1.0MHz 20mA 10V; f= 0.8GHz 5mA 10V; f= 0.8GHz 2SC3110 MIN TYP. MAX UNIT μA 0.1 μ 4.5 GHz 1 1.3 2.5 dB ...