2SC5383 Isahaya Electronics, 2SC5383 Datasheet
2SC5383
Manufacturer Part Number
2SC5383
Description
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
Manufacturer
Isahaya Electronics
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SC5383-T111-1E
Manufacturer:
ISAHAYA
Quantity:
20 000
Company:
Part Number:
2SC5383-T111-1F
Manufacturer:
AVAGO
Quantity:
900
Company:
Part Number:
2SC5383-T111-1F
Manufacturer:
ISAHAY
Quantity:
13 523
Part Number:
2SC5383-T111-1F
Manufacturer:
ISAHAYA
Quantity:
20 000
DESCRIPTION
silicon NPN epitaxial transistor,
It is designed for low frequency voltage application.
FEATURE
● Small collector to emitter saturation voltage.
●Excellent linearity of DC forward gain.
●Ultra super mini package for easy mounting
APPLICATION
For Hybrid IC,small type machine low frequency voltage
Amplify application.
2SC5383 is a ultra super mini package resin sealed
.
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
Symbol
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
Noise figure
Parameter
V
V
V
T
I
P
T
CBO
CEO
EBO
stg
O
c
j
VCE(sat)=0.3V max（@Ic=100mA,IB=10mA）
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Parameter
（Ta=25℃）
ISAHAYA ELECTRONICS CORPORATION
（Ta=25℃）
-55～＋150
Ratings
VCE(sat)
V(BR)
＋150
Symbol
200
150
50
50
I
I
hFE
hFE
Cob
6
CBO
EBO
NF
fT
CEO
I
V
V
V
V
I
V
V
V
C
C
Unit
mW
mA
=100μA ,R
CB
EB
CE
CE
=100mA ,I
CE
CB
CE
℃
℃
V
V
V
=6V, I
=50V, I
=6V, I
=6V, I
=6V, I
=6V, I
=6V, I
C
C
C
E
E
OUTLINE DRAWING
E
=-10mA
=-0.1mA,f=1kHz,RG=2kΩ
=0mA
=1mA
=0.1mA
=0,f=1MHz
E
SILICON NPN EPITAXIAL TYPE(Ultra super mini type)
B
※） It shows hFE classification in below table.
=0mA
=10mA
ｈＦＥ Item
BE
=∞
Test conditions
Item
FOR LOW FREQUENCY AMPLIFY APPLICATION
TERMINAL CONNECTER
JEITA：SC-75A
150～300
0.4
①
②
Ｅ
※
①：BASE
②：EMITTER
③：COLLECTOR
JEDEC：-
〈SMALL-SIGNAL TRANSISTOR〉
1.6
0.8
250～500
Ｆ
③
0.4
Min
150
90
50
-
-
-
-
-
-
400～800
Ｇ
Limits
200
Typ
2.5
2SC5383
-
-
-
-
-
-
-
Unit：ｍｍ
Max
800
0.1
0.1
0.3
15
-
-
-
-
MHz
Unit
μA
μA
V
dB
pF
V
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