2SC5807 Isahaya Electronics Corporation, 2SC5807 Datasheet
2SC5807
Related parts for 2SC5807
2SC5807 Summary of contents
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... DEVELOPING DESCRIPTION 2SC5807 is a silicon NPN epitaxial Transistor. It designed with high collector current and high collector dissipation. FEATURE ●High collector current I =5A C ●Small collector to Emitter saturation voltage V =0.25V TYP. (@I =4A,I =100mA) CE(sat ●High collector dissipation P =500mW C APPLICATION For storobe ,DC/DC convertor,power amplify apprication MAXIMUM RATINGS (Ta=25℃ ...
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ELECTRICAL CHARACTERISTICS (Ta=25℃) SYMBOL PARAMETER break down voltage (BR)CBO break down voltage (BR)EBO break down voltage (BR)CEO I Collector cut off current CBO I Emitter cut off current ...
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DC FORWARD CURRENT GAIN VS. COLLECTER CURRENT(Ⅲ) 10,000 VCE=2V 1,000 Ta=100℃ 100 10 0.001 0.01 0.1 COLLECTER CURRENT I COLLECTER TO EMITTER SATURATION VOLTAGE VS. COLLECTER CURRENT(Ⅱ) 1 IC/IB=10 0.1 Ta=100℃ 0.01 25℃ -25℃ 0.001 0.001 0.01 0.1 COLLECTER CURRENT I COLLECTER ...
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AREA OF SAFETY OPERATION 100 Ta=25℃ Single Pulse Mounted on recommended mount pad ICMAX Pw=1msec ICMAX(pulse) Pw=10msec Pw=100mse 1 Pw=1sec 0.1 DC 0.01 0 COLLECTER TO EMITTER VOLTAGE V ISAHAYA ELECTRONICS CORPORATION ) 100 1000 ...
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... ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. · The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. · ...