2SC5807 Isahaya Electronics Corporation, 2SC5807 Datasheet - Page 2

• Manufacturer Part Number: 2SC5807
• Description: SILICON NPN EPITAXIAL TYPE
• Manufacturer: Isahaya Electronics Corporation

TYPICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Ta=25℃)
* Measured using pulse current.
* It shows ｈ
V
V
V
I
I
ｈ
V
f
Cob
SYMBOL
CBO
EBO
T
(BR)CBO
(BR)EBO
(BR)CEO
CE(sat)
Ｆ Ｅ
0.001
10,000
0.01
1,000
0.1
10
100
1
10
0.001
0
VCE=2V
Ta=25℃
Ｆ Ｅ
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
Gain band width product
Collector output capacitance
0.2
classification in right table.
Ta=100℃
COMMON EMITTER TRANSFER
VS. COLLECTER CURRENT(Ⅰ)
-25℃
DC FORWARD CURRENT GAIN
BASE TO EMITTER VOLTAGE Ｖ
25℃
0.4
0.01
COLLECTER CURRENT Ｉ
PARAMETER
0.6
0.8
0.1
ISAHAYA ELECTRONICS CORPORATION
1
Ｃ
VCE=5V
（ Ａ ）
Ｂ Ｅ
1.2
1
（ Ｖ ）
2V
1V
1.4
I
I
I
V
V
V
I
V
V
C
C
E
C
CB
EB
CE
=4A，I
CE
CB
=50μA，I
=50μA，I
=1mA，R
=5V，I
=40V，I
=2V，I
=6V，I
=20V，I
10
1.6
B
=100mA
C
E
C
=-50mA
=0.5A
E
BE
=0mA
E
=0mA，f=1MHz
C
E
=∞
=0mA
=0mA
=0mA
TESTCONDITIONS
5
4
3
2
1
0
10,000
1,000
0
100
10
0.001
VCE=1V
COLLECTER TO EMITTER VOLTAGE Ｖ
0.4
VS. COLLECTER CURRENT(Ⅱ)
DC FORWARD CURRENT GAIN
COMMON EMITTER OUTPUT
For strobe,DC/DC convertor Application
40∼50mA
Marking
0.01
ｈ
35mA
COLLECTER CURRENT Ｉ
Ｆ Ｅ
0.8
25mA
0.1
Silicon NPN Epitaxial Type
Pc=2W
120 to 270
20mA
30mA
MIN
120
1.2
50
20
6
Ｑ
Ta=100℃
Ｃ
-25℃
LIMITS
25℃
（ Ａ ）
TYP
0.25
150
30
1
Ｃ Ｅ
1.6
15mA
（ Ｖ ）
Ta=25℃
180 to 390
IB=0mA
MAX
10mA
390
0.5
0.5
1.0
5mA
Ｒ
10
2
UNIT
MHz
μA
μA
pF
V
V
V
V
-