MB84VA2002-10 Fujitsu Microelectronics, Inc., MB84VA2002-10 Datasheet

MB84VA2002-10

Manufacturer Part Number

MB84VA2002-10

Description

8m X 8/x 16 Flash Memory & 2m X 8 Static Ram

Manufacturer

Fujitsu Microelectronics, Inc.

Datasheet

1.MB84VA2002-10.pdf (29 pages)

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Download datasheet (196Kb)

FUJITSU SEMICONDUCTOR

MCP (Multi-Chip Package) FLASH MEMORY & SRAM

CMOS

8M ( 8/ 16) FLASH MEMORY &

2M ( 8) STATIC RAM

MB84VA2002

Embedded Erase

— FLASH MEMORY

— SRAM

FEATURES

• Power supply voltage of 2.7 to 3.6 V

• High performance

• Operating Temperature

• Minimum 100,000 write/erase cycles

• Sector erase architecture

• Boot Code Sector Architecture

• Embedded Erase

• Embedded Program

• Data Polling and Toggle Bit feature for detection of program or erase cycle completion

• Ready-Busy output (RY/BY)

• Automatic sleep mode

• Low V

• Erase Suspend/Resume

• Please refer to "MBM29LV800TA/BA" data sheet in detailed function

• Power dissipation

• Power down features using CE1s and CE2s

• Data retention supply voltage: 2.0 V to 3.6 V

DATA SHEET

100 ns maximum access time

–20 to +85 C

One 16 K byte, two 8 K bytes, one 32 K byte, and fifteen 64 K bytes.

Any combination of sectors can be concurrently erased. Also supports full chip erase.

MB84VA2002: Top sector

MB84VA2003: Bottom sector

Automatically pre-programs and erases the chip or any sector

Automatically writes and verifies data at specified address

Hardware method for detection of program or erase cycle completion

When addresses remain stable, automatically switch themselves to low power mode.

Suspends the erase operation to allow a read in another sector within the same device

Operating : 35 mA max.

Standby : 50 A max.

write inhibit

and Embedded Program

Algorithms

2.5 V

-10

are trademarks of Advanced Micro Devices, Inc.

/MB84VA2003

-10

DS05-50105-2E

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