MB84VA2002-10 Fujitsu Microelectronics, Inc., MB84VA2002-10 Datasheet - Page 15

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MB84VA2002-10

Manufacturer Part Number
MB84VA2002-10
Description
8m X 8/x 16 Flash Memory & 2m X 8 Static Ram
Manufacturer
Fujitsu Microelectronics, Inc.
Datasheet

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• Write Cycle (WE control) (Flash)
Notes: 1. PA is address of the memory location to be programmed.
ADDRESSES
CEf
OE
WE
DQ
2. PD is data to be programmed at byte address.
3. DQ
4. D
5. Figure indicates last two bus cycles out of four bus cycle sequence
6. These waveforms are for the x16 mode. The addresses differ from x8 mode.
OUT
7
t
GHWL
is the output of the complement of the data written to the device.
is the output of the data written to the device.
3rd Bus Cycle
t
CS
555H
t
WC
t
A0H
t
WP
DS
t
WPH
t
t
AS
t
DH
CH
PA
MB84VA2002
PD
t
AH
Data Polling
t
WHWH1
DQ
PA
7
D
OUT
-10
/MB84VA2003
t
CO
t
RC
t
F OE
D
OUT
t
OH
-10
15

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