GP201MHS18 Dynex Semiconductor, GP201MHS18 Datasheet

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GP201MHS18

Manufacturer Part Number
GP201MHS18
Description
Low VCE(SAT) Half Bridge IGBT Module
Manufacturer
Dynex Semiconductor
Datasheet
FEATURES
APPLICATIONS
bridge, dual and single switch configurations covering voltages
from 600V to 3300V and currents up to 4800A.
enhancement mode, insulated gate bipolar transistor (IGBT)
module.
losses, the module is of particular relevance in low to medium
frequency applications. The IGBT has a wide reverse bias safe
operating area (RBSOA) ensuring reliability in demanding
applications.
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP201MHS18
Note: When ordering, please use the complete part number.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Low V
Non Punch Through Silicon
Isolated Copper Baseplate
Low Inductance Internal Construction
200A Per Arm
High Reliability Inverters
Motor Controllers
Traction Drives
Resonant Converters
The Powerline range of high power modules includes half
The GP201MHS18 is a half bridge 1800V, n channel
The module incorporates an electrically isolated base plate
CE(SAT)
Designed with low V
CE(SAT)
to minimise conduction
KEY PARAMETERS
V
V
I
I
C
C(PK)
CES
CE(sat)
Low V
1(E
11
10
11(C
8
9
9(C
Fig. 2 Electrical connections - (not to scale)
1
(See package details for further information)
C
2
1
2
)
)
)
CE(SAT)
(typ)
(max)
(max)
Fig. 1 Half bridge circuit diagram
1
Outline type code: M
Half Bridge IGBT Module
1800V
2.6V
200A
400A
2(E
2
2
)
GP201MHS18
DS5290-2.1 January 2001
3
GP201MHS18
3(C
5(E
4(G
6(G
7(E
6
7
5
4
1
2
1
1
2
)
)
)
)
)
1/10

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GP201MHS18 Summary of contents

Page 1

... The Powerline range of high power modules includes half bridge, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP201MHS18 is a half bridge 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. Designed with low V ...

Page 2

... GP201MHS18 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. ...

Page 3

... 10mA 15V 200A 15V 200A 125˚ case 1ms 200A 200A 125˚C F case V = 25V 0V 1MHz GP201MHS18 Min. Typ. Max. Units - - 4.5 5.5 V 6.5 - 2 200 400 A - 2.2 2.5 ...

Page 4

... GP201MHS18 ELECTRICAL CHARACTERISTICS T = 25˚C unless stated otherwise case Symbol Parameter t Turn-off delay time d(off) t Fall time f E Turn-off energy loss OFF Turn-on delay time t d(on) t Rise time r E Turn-on energy loss ON Q Diode reverse recovery charge 125˚C unless stated otherwise ...

Page 5

... 6 4 140 160 180 200 - (A) C Fig. 6 Typical turn-off energy vs collector current GP201MHS18 V = 20/15/12/10V ge = 125˚C 1.0 2.0 3.0 4.0 5.0 Collector-emitter voltage (V) ce Fig. 4 Typical output characteristics = 125˚C = 15V = 900V ...

Page 6

... GP201MHS18 15V 900V 125˚C 40 case 100 Collector current, I Fig. 7 Typical diode turn-off energy vs collector current 400 350 T 300 250 200 150 100 0.5 1.0 1.5 2.0 Foward voltage, V Fig. 9 Diode typical forward characteristics 6/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. ...

Page 7

... Fig. 12 Transient thermal impedance 350 PWM Sine Wave Power Factor = 0.9, Modulation Index =1 300 250 200 150 100 Fig current rating vs case temperature GP201MHS18 Transistor 0.01 0.1 1 Pulse width ( 100 120 Case temperature (˚C) case Diode 10 ...

Page 8

... GP201MHS18 PACKAGE DETAILS For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE Recommended torque for electrical connections (M6): 5Nm (44lbs.ins) 8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. ...

Page 9

... Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP201MHS18 Application Note Number AN4502 AN4503 AN4504 ...

Page 10

... GP201MHS18 HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontarion, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status ...

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