GP201MHS18 Dynex Semiconductor, GP201MHS18 Datasheet - Page 6

• Manufacturer Part Number: GP201MHS18
• Description: Low VCE(SAT) Half Bridge IGBT Module
• Manufacturer: Dynex Semiconductor

GP201MHS18
6/10
400
350
300
250
200
150
100
35
30
25
20
15
10
50
45
40
Fig. 7 Typical diode turn-off energy vs collector current
50
5
0
0
0
0
Fig. 9 Diode typical forward characteristics
V
V
GE
CE
25
= 15V
= 900V
0.5
50
1.0
Foward voltage, V
Collector current, I
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
75
1.5
100
T
case
2.0
T
= 125˚C
j
125
= 25˚C
F
T
T
- (V)
case
- (A)
2.5
150
= 25˚C
T
j
= 125˚C
3.0
175
200
3.5
Fig. 7 Typical diode reverse recovery charge vs collector current
450
400
300
250
200
150
100
500
350
600
500
400
300
200
100
50
0
0
0
0
R
T
V
R
case
g(min)
ge
g(min)
Fig. 10 Reverse bias safe operating area
20
= 15V
= 125˚C
: Minimum recommended value
= 4.7
400
40
Collector-emitter voltage, V
t
t
d(off)
t
d(on)
t
f
r
60
Collector current, I
800
80
100
www.dynexsemi.com
1200
120
C
- (A)
ce
140 160 180 200
- (V)
T
V
V
R
1600
case
GE
CE
g
= 4.7Ω
= ±15V
= 900V
= 125˚C
2000