BR35H160-WC ROHM Co. Ltd., BR35H160-WC Datasheet - Page 2

• Manufacturer Part Number: BR35H160-WC
• Description: Automotive Serial Eeproms
• Manufacturer: ROHM Co. Ltd.

●Absolute Maximum Ratings (Ta=25℃)
●Memory Cell Characteristics (Vcc=2.5V to 5.5V)
●Electrical Characteristics (Unless otherwise specified, Ta=-40 to +125℃, Vcc=2.5 to 5.5V)
●Block Diagram
© 2011 ROHM Co., Ltd. All rights reserved.
BR35H□□□-WC Series
www.rohm.com
＊When using at Ta=25℃ or higher, 4.5mW (*1,*2),
*5:Not 100% TESTED
Impressed Voltage
Permissible
Dissipation
Storage
Temperature Range
Operating
Temperature Range
Terminal Voltage
Endurance
Data
Retention
“H” Input Voltage
“L” Input Voltage
“L” Output Voltage
“H” Output Voltage
Input Leakage Current
Output Leakage Current
Operating Current
(Write)
Operating Current
(Read)
Standby Current
* This product is not designed for protection against radioactive rays.
3.3mW (*3) , 3.1 mW (*4)to be reduced per 1℃
Parameter
Parameter
Parameter
*5
*5
1,000,000
500,000
300,000
Min.
40
25
20
Symbol
Limits
CSB
SCK
SO
Topr
Tstg
Vcc
SI
Pd
Typ. Max.
-
Symbol
-
-
-
-
-
-
VOH
ICC1
ICC2
ICC3
ICC4
VOL
VIH
VIL
ILO
ISB
ILI
410(TSSOP-B8) *
INSTRUCTION DECODE
CONTROL CLOCK
GENERATION
560(SOP-J8)
380(MSOP8)
-
-
-
-
-
-
-0.3 toVcc+0.3
560(SOP8)
0.7xVcc
Vcc-0.5
INSTRUCTION
-0.3 to +6.5
-65 to +150
-40 to +125
REGISTER
Min.
-0.3
-10
-10
－
－
－
－
－
Cycles Ta≦85℃
Cycles Ta≦105℃
Cycles Ta≦125℃
Limits
0
Years
Years
Years
Unit
Limits
Typ.
Ta≦105℃
Ta≦125℃
Ta≦25℃
－
－
－
－
－
－
－
－
－
－
－
Fig.1 Block Diagram
ADDRESS
REGISTER
DATA
REGISTER
Condition
*
*
*
WRITE
INHIBITION
1
2
3
4
Vcc+0.3
0.3xVcc
VOLTAGE
DETECTION
2.0
2.5
3.0
5.5
Max.
11～14bit *9
Unit
mW
Vcc
0.4
1.5
2.0
10
10
10
℃
℃
V
V
8bit
2/16
*7
*8
*7
*8
READ/WRITE
ADDRESS
DECODER
HIGH VOLTAGE
GENERATOR
AMP
●Recommended Operating Conditions
●Input / Output Capacitance (Ta=25℃, frequency=5MHz)
Unit
mA
mA
mA
mA
μA
μA
μA
V
V
V
V
Supply Voltage
Input Voltage
Input
Capacitance
Output
Capacitance
*6:Not 100% TESTED
11～14bit *9
Parameter
Parameter
8bit
*7 BR35H160/320-WC *8 BR35H640/128-WC
2.5V≦Vcc≦5.5V
2.5V≦Vcc≦5.5V
IOL=2.1mA
IOH=-0.4mA
VIN=0V to Vcc
VOUT=0V to Vcc, CSB=Vcc
Vcc=2.5V,fSCK=5MHz, tE/W=5ms,
VIH/VIL=0.9Vcc/0.1Vcc, SO=OPEN
Byte Wrte, Page Write
Vcc=5.5V,fSCK=5MHz, tE/W=5ms,
VIH/VIL=0.9Vcc/0.1Vcc, SO=OPEN
Byte Wirte, Page Write
Vcc=2.5V,fSCK=5MHz, VIH/VIL=0.9Vcc/0.1Vcc
SO=OPEN, Read, Read Status Register
Vcc=5.5V,fSCK=5MHz, VIH/VIL=0.9Vcc/0.1Vcc
SO=OPEN, Read, Read Status Register
Vcc=5.5V
CSB=Vcc, SCK=SI=Vcc or GND, SO=OPEN
STATUS REGISTER
16K～128K
EEPROM
*6
*6
Symbol Conditions Min. Max. Unit
C
C
Symbol
OUT
IN
Vcc
Vin
*9 11bit: BR35H160-WC
Conditions
12bit: BR35H320-WC
13bit: BR35H640-WC
14bit: BR35H128-WC
V
V
OUT
IN
=GND
=GND －
2.5 to 5.5
0 to Vcc
Limits
Technical Note
2011.03 - Rev.C
－
8
8
Unit
pF
V