T35L6432A-5T Taiwan Memory Technology, Inc., T35L6432A-5T Datasheet - Page 8

• Manufacturer Part Number: T35L6432A-5T
• Description: 64K x 32 SRAM
• Manufacturer: Taiwan Memory Technology, Inc.

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CAPACITANCE
THERMAL CONSIDERATION
Thermal Resistance - Junction to
Ambient
Thermal Resistance - Junction to Case
AC ELECTRICAL CHARACTERISTICS
Address Status( ADSC , ADSP ) t ADSS 2.5
Address Status( ADSC , ADSP ) t ADSH 0.5
Taiwan Memory Technology, Inc. reserves the right
to change products or specifications without notice.
Clock
Clock cycle time
Clock HIGH time
Clock LOW time
Output Times
Clock to output valid
Clock to output invalid
Clock to output in Low-Z
Clock to output in High-Z
OE to output valid
OE to output in Low-Z
OE to output in High-Z
Setup Times
Address
Address Advance ( ADV )
Byte Write Enables
( BW1~ BW4 , BWE , GW )
Data-in
Chip Enables( CE , CE2 ,CE2)
Hold Times
Address
Address Advance ( ADV )
Byte Write Enables
( BW1~ BW4 , BWE , GW )
Data-in
Chip Enables( CE , CE2 ,CE2)
DESCRIPTION
Input Capacitance
Input/ Output Capacitance(DQ)
DESCRIPTION
DESCRIPTION
CH
TE
t KC
t KH
t KL
t KQ
t KQX
t KQLZ 2
t KQHZ
t OEQ
t OELZ
t OEHZ
t AS
t AAS
t WS
t DS
t CES
t AH
t AAH
t WH
t DH
t CEH
SYM. MIN MAX MINMAX MIN MAX MIN MAX MIN MAX UNITS NOTES
T A = 25 C; f = 1 MHz
CONDITIONS
VCC = 3.3V
2.5
2.5
2.5
2.5
2.5
0.5
0.5
0.5
0.5
0.5
Still air, soldered on 4.25x
1.125 inch 4-layer PCB
8
3
3
2
0
-4.5
CONDITIONS
4.5
4.5
4.5
3
0.5
0.5
0.5
0.5
0.5
0.5
10
4
4
2
3
0
3
3
3
3
3
3
P. 8
-5
(Note 5) (0 C T A 70 C; VCC=3.3V +10%/-5%)
5
5
5
4
SYM.
C O
C I
0.5
0.5
0.5
0.5
0.5
0.5
12
4
4
2
3
0
3
3
3
3
3
3
-6
6
5
5
5
SYM. QFP TYP UNITS
TYP
JA
JB
3
6
0.5
0.5
0.5
0.5
0.5
0.5
15
5
5
2
3
0
3
3
3
3
3
3
-7
Publication Date: DEC. 1998
MAX
7
6
5
6
20
1
4
7
0.5
0.5
0.5
0.5
0.5
0.5
20
6
6
2
3
0
3
3
3
3
3
3
-8
T35L6432A
UNITS NOTES
C/W
C/W
8
6
6
6
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Revision:A
NOTES
8, 10
8, 10
8, 10
8, 10
8, 10
8, 10
8, 10
8, 10
8, 10
8, 10
8, 10
8, 10
6, 7
6, 7
6, 7
6, 7
4
4
9