MCR8DCN ON Semiconductor, MCR8DCN Datasheet

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MCR8DCN

Manufacturer Part Number
MCR8DCN
Description
Silicon Controlled Rectifiers Reverse Blocking Thyristors
Manufacturer
ON Semiconductor
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MCR8DCNT4G
Manufacturer:
ON
Quantity:
12 500
Part Number:
MCR8DCNT4G
Manufacturer:
ON/安森美
Quantity:
20 000
MCR8DCM, MCR8DCN
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
applications such as motor control; process control; temperature, light
and speed control.
Features
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 4
Peak Repetitive Off−State Voltage
(Note 1) (T
50 to 60 Hz, Gate Open)
On−State RMS Current
(180° Conduction Angles; T
Average On−State Current
(180° Conduction Angles; T
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, T
Circuit Fusing Consideration (t = 8.3 msec)
Forward Peak Gate Power
(Pulse Width ≤ 1.0 msec, T
Forward Average Gate Power
(t = 8.3 msec, T
Forward Peak Gate Current
(Pulse Width ≤ 1.0 msec, T
Operating Junction Temperature Range
Storage Temperature Range
Designed for high volume, low cost, industrial and consumer
Small Size
Passivated Die for Reliability and Uniformity
Low Level Triggering and Holding Characteristics
Available in Surface Mount Lead Form − Case 369C
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings:
Pb−Free Packages are Available
for zero or negative gate voltage; positive gate voltage shall not be applied
concurrent with negative potential on the anode. Blocking voltages shall not
be tested with a constant current source such that the voltage ratings of the
device are exceeded.
DRM
, V
RRM
J
= −40 to 125°C, Sine Wave,
for all types can be applied on a continuous basis. Ratings apply
C
Rating
= 105°C)
Machine Model, C u 400 V
Human Body Model, 3B u 8000 V
(T
J
C
C
MCR8DCM
MCR8DCN
= 25°C unless otherwise noted)
C
C
= 105°C)
= 105°C)
Preferred Device
= 105°C)
= 105°C)
J
= 125°C)
Symbol
I
P
V
V
T(RMS)
I
I
P
T(AV)
I
T
G(AV)
DRM,
TSM
RRM
I
GM
T
GM
stg
2
J
t
−40 to 125
−40 to 150
Value
600
800
8.0
5.1
5.0
0.5
2.0
80
26
1
A
Unit
2
°C
°C
W
W
V
A
A
A
A
sec
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
1
2
3
4
Y
WW
CR8DCx
G
ORDERING INFORMATION
8 AMPERES RMS
600 − 800 VOLTS
A
MARKING DIAGRAM
http://onsemi.com
PIN ASSIGNMENT
1 2
CASE 369C
= Year
= Work Week
= Device Code
= Pb−Free Package
STYLE 4
SCRs
DPAK
8DCxG
x= M or N
YWW
3
Publication Order Number:
CR
Cathode
Anode
Anode
Gate
4
G
K
MCR8DCM/D

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MCR8DCN Summary of contents

Page 1

... MCR8DCM, MCR8DCN Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features • Small Size • Passivated Die for Reliability and Uniformity • ...

Page 2

... Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. ORDERING INFORMATION Device MCR8DCMT4 MCR8DCMT4G MCR8DCNT4 MCR8DCNT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MCR8DCM, MCR8DCN 2 25°C unless otherwise noted 25° 125° ...

Page 3

... TYPICAL @ T = 25°C J MAXIMUM @ T 10 MAXIMUM @ T = 25°C J 1.0 0.1 0 1.0 2.0 3 INSTANTANEOUS ON−STATE VOLTAGE (VOLTS) T Figure 3. On−State Characteristics MCR8DCM, MCR8DCN + Current on state RRM RRM Reverse Blocking Region (off state) Reverse Avalanche Region Anode − Conduction a = Conduction 6.0 Angle Angle 4 30° ...

Page 4

... Figure 5. Typical Gate Trigger Current versus Junction Temperature 100 10 1.0 −40 −25 −10 5 JUNCTION TEMPERATURE (°C) J Figure 7. Typical Holding Current versus Junction Temperature 1000 100 10 MCR8DCM, MCR8DCN 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0 110 125 −40 −25 −10 Figure 6. Typical Gate Trigger Voltage versus 100 10 1.0 80 ...

Page 5

... Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com MCR8DCM, MCR8DCN PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O SEATING − ...

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