MCR8DCN ON Semiconductor, MCR8DCN Datasheet - Page 2

• Manufacturer Part Number: MCR8DCN
• Description: Silicon Controlled Rectifiers Reverse Blocking Thyristors
• Manufacturer: ON Semiconductor

2. Surface mounted on minimum recommended pad size.
3. 1/8″ from case for 10 seconds.
4. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
MCR8DCMT4
MCR8DCMT4G
MCR8DCNT4
MCR8DCNT4G
Thermal Resistance
Maximum Lead Temperature for Soldering Purposes (Note 3)
Peak Repetitive Forward or Peak Repetitive Reverse Blocking Current
Peak On−State Voltage (Note 4) (I
Gate Trigger Current (Continuous dc)
Gate Trigger Voltage (Continuous dc)
Holding Current
Latching Current
Critical Rate of Rise of Off−State Voltage
(V
(V
(T
(V
(T
(T
(V
(V
(V
(V
AK
AK
J
AK
J
J
AK
AK
AK
AK
= −40°C)
= −40°C)
= 125°C)
= Rated V
= 12 V, R
= 12 V, R
= 12 V, Initiating Current = 200 mA, Gate Open)
= 12 V, I
= 12 V, I
= Rated V
G
G
L
L
DRM
DRM
= 15 mA, T
= 30 mA, T
= 100 W, T
= 100 W, T
Device
, Exponential Waveform, Gate Open, T
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient (Note
or V
RRM
J
J
J
J
= 25°C)
= 25°C)
= 25°C)
= −40°C)
, Gate Open)
Characteristics
Characteristic
TM
= 16 A)
(T
J
= 25°C unless otherwise noted)
MCR8DCM, MCR8DCN
2)m
http://onsemi.com
T
T
T
T
J
J
J
J
J
= 25°C
= 125°C
= 25°C
= −40°C
= 125°C)
(Pb−Free)
(Pb−Free)
Package
DPAK
DPAK
DPAK
DPAK
2
Symbol
Symbol
I
R
I
dv/dt
R
R
DRM
V
V
RRM
I
T
GT
I
qJC
qJA
qJA
I
TM
GT
H
L
L
,
2500 / Tape & Reel
Min
2.0
0.5
0.2
4.0
4.0
50
−
−
−
−
−
−
−
Shipping
Max
0.65
Typ
260
200
2.2
1.4
7.0
88
80
22
22
−
−
−
−
−
−
−
†
Max
0.01
5.0
1.8
1.0
2.0
15
30
30
60
30
60
−
−
°C/W
V/ms
Unit
Unit
mA
mA
mA
mA
°C
V
V