BAS16VV-BAS16VY NXP Semiconductors, BAS16VV-BAS16VY Datasheet - Page 5

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BAS16VV-BAS16VY

Manufacturer Part Number
BAS16VV-BAS16VY
Description
Bas16vv; Bas16vy Triple High-speed Switching Diodes
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
BAS16VV_BAS16VY_3
Product data sheet
Fig 1. Forward current as a function of forward
Fig 3. Reverse current as a function of junction
(1) T
(2) T
(3) T
(1) V
(2) V
(3) V
(nA)
I
(mA )
R
300
200
100
I
10
10
10
10
F
10
0
voltage
5
4
3
2
temperature
0
0
amb
amb
amb
R
R
R
= 75 V; maximum values
= 75 V; typical values
= 25 V; typical values
= 150 C; typical values
= 25 C; typical values
= 25 C; maximum values
(1)
(1)
(2)
(3)
100
1
(2)
T
V
(3)
j
F
( C )
(V)
mbg382
mga884
200
2
Rev. 03 — 20 April 2007
Fig 2. Non-repetitive peak forward current as a
Fig 4. Diode capacitance as a function of reverse
I
FSM
(A)
10
(pF )
C
0.8
0.6
0.4
0.2
10
d
1
1
0
Based on square wave currents.
T
function of pulse duration; maximum values
f = 1 MHz; T
voltage; typical values
1
0
j
= 25 C; prior to surge
BAS16VV; BAS16VY
10
Triple high-speed switching diodes
4
amb
= 25 C
10
8
2
10
12
3
© NXP B.V. 2007. All rights reserved.
t
V
p
R
mgw103
( s)
mbg446
(V)
10
16
4
5 of 12

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