BT100-8 IK Semiconductor, BT100-8 Datasheet
BT100-8
Manufacturer Part Number
BT100-8
Description
Sensitive Gate Silicon Controlled Rectifiers
Manufacturer
IK Semiconductor
Datasheet
1.BT100-8.pdf
(5 pages)
Sensitive Gate Silicon Controlled Rectifiers
Features
◇ Repetitive Peak Off-State Voltage : 600V
◇ R.M.S On-State Current (IT(RMS)=0.8 A)
◇ Low On-State Voltage (1.2V(Typ.)@ITM)
General Description
Sensitive triggering SCR is suitable for the application
where gate current limited such as small motor control,
gate driver for large SCR, sensing and detecting circuits.
Absolute Maximum Ratings
Symbol
I
P
V
V
I
T
T(RMS)
I
P
I
T(AV)
I
G(AV)
FGM
T
TSM
DRM
RGM
STG
GM
2 t
J
Repetitive Peak Off-state Voltage
Average On-State Current
R.M.S On-State Current
Surge On-State Current
I²
Forward Peak Gate Power
Dissipation
Forward Average Gate Power
Dissipation
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
t
for Fusing
Parameter
(TJ=25 ℃ unless otherwise specified)
Half Sine Wave : T
All Conduction Angle
1/2 Cycle, 60Hz, Sine Wave Non-
Repetitive
t = 8.3ms
T
T
A
A
=25℃, Pulse Width≤1.0㎲
=25℃, t=8.3ms
Condition
C
=74℃
-40
-40
Ratings
0.415
600
0.5
0.8
0.1
5.0
10
2
1
~
~
125
150
BT100-8
Units
A²
℃
℃
W
W
V
A
A
A
A
V
1
S
Related parts for BT100-8
BT100-8 Summary of contents
Page 1
... Operating Junction Temperature J T Storage Temperature STG Condition Half Sine Wave : T =74℃ C All Conduction Angle 1/2 Cycle, 60Hz, Sine Wave Non- Repetitive t = 8.3ms T =25℃, Pulse Width≤1.0㎲ =25℃, t=8.3ms A BT100-8 Ratings Units 600 V 0 0.415 A² 0 ...
Page 2
... DRM Exponential wave-form R =1000Ω T =125℃ =2A ; Ig=10mA TM V =12V, Gate Open AK Initiating Current=50mA T =25℃ =-40℃ c Junction to case Junction to Ambient BT100-8 Ratings Unit Min Typ Max ━ ━ 10 ㎂ 200 ━ ━ 1.2 1.7 V ━ ━ ━ 200 ㎂ ...
Page 3
... BT100-8 3 ...
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... BT100-8 4 ...
Page 5
... TO-92 BT100-8 5 ...