S2006FS221V Teccor Electronics, Inc., S2006FS221V Datasheet - Page 19

• Manufacturer Part Number: S2006FS221V
• Description: Thyristor Product Catalog
• Manufacturer: Teccor Electronics, Inc.

Thyristor
di/dt (Critical Rate-of-rise of On-state Current) –
value of the rate-of-rise of on-state current which a thyristor can
withstand without deleterious effect
dv/dt (Critical Rate-of-rise of Off-state Voltage or Static
dv/dt) –
which will cause switching from the off state to the on state
dv/dt(c) Critical Rate-of-rise of Commutation Voltage of a
Triac (Commutating dv/dt) –
of principal voltage which will cause switching from the off state
to the on state immediately following on-state current conduction
in the opposite quadrant
I
Measure of let-through energy in terms of current and time for
fusing purposes
I
point
I
current that may occur under the conditions of V
I
switch a thyristor from the off state to the on state
I
maintain the thyristor in the on state
I
duration and specified waveshape
I
current that may occur under the conditions of V
I
from the clamping state to on state
I
that may be allowed under stated conditions, usually the full-
cycle RMS current
I
cycle AC current pulse allowed
P
power which may be dissipated between the gate and main ter-
minal 1 (or cathode) average over a full cycle
P
may be dissipated between the gate and main terminal 1 (or
cathode) for a specified time duration
R
ture difference between the thyristor junction and ambient divided
by the power dissipation causing the temperature difference
under conditions of thermal equilibrium
Note: Ambient is defined as the point where temperature does
not change as a result of the dissipation.
R
difference between the thyristor junction and the thyristor case
divided by the power dissipation causing the temperature differ-
ence under conditions of thermal equilibrium
©2002 Teccor Electronics
Thyristor Product Catalog
2
BO
DRM
GT
H
PP
RRM
S
T(RMS)
TSM
t (RMS Surge (Non-repetitive) On-state Fusing Current) –
G(AV)
GM
(Switching Current) –
(Holding Current) –
JA
JC
(Gate Trigger Current) –
(Peak Pulse Current) –
(Breakover Current) –
(Surge (Non-repetitive) On-state Current) –
(Peak Gate Power Dissipation) –
(Repetitive Peak Off-state Current) –
(Repetitive Peak Reverse Current) –
(Thermal Resistance, Junction-to-ambient) –
(Thermal Resistance, Junction-to-case) –
(Average Gate Power Dissipation) –
(On-state Current) –
Minimum value of the rate-of-rise of principal voltage
Minimum principal current required to
Current at V
Principal current at the breakover
Peak pulse current at a short time
Anode cathode principal current
Minimum gate current required to
Minimum value of the rate-of-rise
S
when a sidac switches
Maximum power which
Maximum leakage
Maximum leakage
Value of gate
DRM
RRM
Temperature
Peak single
Maximum
Tempera-
Electrical Parameter Terminology
E0 - 3
t
the 10% rise of the gate pulse and the 90% rise of the principal
current pulse during switching of a thyristor from the off state to
the on state
t
between the instant when the principal current has decreased to
zero after external switching of the principal voltage circuit and
the instant when the SCR is capable of supporting a specified
principal voltage without turning on
V
point
V
able instantaneous value of repetitive off-state voltage that may
be applied across a bidirectional thyristor (forward or reverse
direction) or SCR (forward direction only)
V
produce the gate trigger current
V
able instantaneous value of a repetitive reverse voltage that may
be applied across an SCR without causing reverse current ava-
lanche
V
switches from a clamping state to on state
V
the on state
Diode Rectifiers
I
tion current
I
leakage current that may occur at rated V
I
rent
I
Current) –
rent allowed for specified duration
V
(peak) forward voltage drop from the anode to cathode at stated
conditions
V
reverse blocking voltage that may be applied to the rectifier
V
mum peak allowable value of a repetitive reverse voltage that
may be applied to the rectifier
gt
q
F(AV)
FM
F(RMS)
FSM
BO
DRM
GT
RRM
S
T
FM
R
RRM
(Circuit-commutated Turn-off Time) –
(Gate-controlled Turn-on Time) –
(On-state Voltage) –
(Switching Voltage) –
(Reverse Blocking Voltage) –
(Maximum (Peak) Reverse Current) –
(Gate Trigger Voltage) –
(Breakover Voltage) –
(Maximum (Peak) Forward Voltage Drop) –
(Maximum (Peak) Forward (Non-repetitive) Surge
(Average Forward Current) –
(Repetitive Peak Off-state Voltage) –
(Repetitive Peak Reverse Voltage) –
(Maximum (Peak) Repetitive Reverse Voltage) –
(RMS Forward Current) –
Maximum (peak) forward single cycle AC surge cur-
Principal voltage when the thyristor is in
Voltage point after V
Principal voltage at the breakover
Minimum gate voltage required to
RMS forward conduction cur-
Maximum allowable DC
Average forward conduc-
Time interval between
RRM
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Time interval
Maximum reverse
Maximum allow-
Maximum allow-
BO
[phone]
when a sidac
Maximum
Maxi-