IRFH5301PBF International Rectifier, IRFH5301PBF Datasheet - Page 4

• Manufacturer Part Number: IRFH5301PBF
• Description: HEXFET Power MOSFET
• Manufacturer: International Rectifier

Fig 7. Typical Source-Drain Diode Forward Voltage
4
1000
100
0.1
200
160
120
10
80
40
Fig 9. Maximum Drain Current Vs.
0.001
1
0
0.01
0.2
0.1
25
10
Case (Bottom) Temperature
1E-006
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
V SD , Source-to-Drain Voltage (V)
0.4
50
T J = 150°C
T C , Case Temperature (°C)
D = 0.50
0.6
75
Limited By Package
0.05
0.01
0.20
0.10
0.02
1E-005
T J = 25°C
SINGLE PULSE
( THERMAL RESPONSE )
0.8
100
V GS = 0V
1.0
125
t 1 , Rectangular Pulse Duration (sec)
1.2
150
0.0001
0.001
10000
1000
Fig 10. Threshold Voltage Vs. Temperature
100
3.0
2.5
2.0
1.5
1.0
0.5
0.1
10
1
0.10
-75 -50 -25
Fig 8. Maximum Safe Operating Area
Tc = 25°C
Tj = 150°C
Single Pulse
I D = 1.0A
ID = 1.0mA
ID = 250µA
ID = 100µA
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
V DS , Drain-to-Source Voltage (V)
OPERATION IN THIS AREA LIMITED
BY R
T J , Temperature ( °C )
0.01
DS
0
1
(on)
25
50
10msec
100µsec
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1msec
75 100 125 150
10
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0.1
100