2SK123 Panasonic Semiconductor, 2SK123 Datasheet
2SK123
Manufacturer Part Number
2SK123
Description
For Impedance Conversion In Low Frequency
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SK123.pdf
(3 pages)
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Silicon Junction FETs (Small Signal)
2SK0123
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For electret capacitor microphone
Publication date: January 2002
Drain to Source voltage
Drain to Gate voltage
Drain to Source current
Drain to Gate current
Gate to Source current
Allowable power dissipation
Operating ambient temperature
Storage temperature
Current consumption
Drain to Source cut-off current
Mutual conductance
Noise figure
Voltage gain
Voltage gain difference
High mutual conductance g
Low noise voltage of NV
Features
Absolute Maximum Ratings
Electrical Characteristics
Parameter
Parameter
(2SK123)
m
V
V
I
I
I
P
T
T
I
I
g
NV
G
G
G
Symbol
Symbol
DSO
DGO
GSO
D
DSS
|G
|G
m
D
opr
stg
(T
DSO
DGO
V1
V2
V3
V2
V1
a
(T
G
G
V1
V3
a
25 C)
|
|
25 C)
V
V
V
V
C
V
C
V
C
V
C
D
O
O
O
O
DS
D
D
D
D
D
55 to 150
Ratings
20 to 80
4.5 V, C
200
10 pF, A-curve
10 pF, e
10 pF, e
10 pF, e
4.5 V, V
4.5V, R
4.5 V, R
12 V, R
1.5 V, R
20
20
2
2
2
4.5 V, V
Note) The part number in the parenthesis shows conventional part number.
SJF00005BED
O
Conditions
D
D
G
G
G
D
D
GS
10 pF, R
GS
2.2 k
2.2 k
10 mV, f
10 mV, f
10 mV, f
2.2 k
2.2 k
Unit
mW
0, f
mA
mA
mA
°C
°C
0
V
V
D
1 kHz
2.2 k
1%
1%
1%
1%
1 kHz
1 kHz
1 kHz
1%
Marking Symbol: 1H
Note: For the forming type, (Y) is indicated after the part No.
10˚
min
100
0.7
95
4.5
0
0
0
(0.95) (0.95)
3
1
2.90
1.9
+0.20
–0.05
0.1
0.40
3
2
typ
1.6
3.3
+0.10
–0.05
2
0.3
max
600
480
Mini3-G1 Package
3.5
3.5
4
0.16
+0.10
–0.06
1: Drain
2: Source
3: Gate
Unit: mm
Unit
mS
dB
dB
dB
dB
dB
A
A
V
1
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2SK123 Summary of contents
Page 1
... Silicon Junction FETs (Small Signal) 2SK0123 (2SK123) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone Features High mutual conductance g m Low noise voltage of NV Absolute Maximum Ratings Parameter Symbol Drain to Source voltage V Drain to Gate voltage V Drain to Source current ...
Page 2
240 200 160 120 100 120 140 160 ( C ) Ambient temperature 2 kHz ...
Page 3
... No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. ...