2SK665 Panasonic Semiconductor, 2SK665 Datasheet
2SK665
Manufacturer Part Number
2SK665
Description
Silicon MOS FETs
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SK665.pdf
(3 pages)
Silicon MOS FETs (Small Signal)
2SK0665 (2SK665)
Silicon N-Channel MOS FET
For switching
I Features
G High-speed switching
G Small drive current owing to high input inpedance
G High electrostatic breakdown voltage
I Absolute Maximum Ratings
I Electrical Characteristics
* 1
V
GS
Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
High level output voltage
Low level output voltage
Input resistance
Turn-on time
Turn-off time
Resistance ratio R
= 5V
50Ω
Parameter
Parameter
V
out
1
200Ω
/R
2
= 1/50
V
DD
* 2
= 5V
t
V
V
I
I
P
T
T
I
I
V
V
R
| Y
V
V
R
t
t
Symbol
Symbol
on
on
off
D
DP
DSS
GSS
(Ta = 25°C)
D
ch
stg
DS(on)
1
DS
GSO
DSS
th
OH
SL
, t
* 2
fs
* 2
+ R
off
|
(Ta = 25°C)
2
measurement circuit
* 3
* 1
V
V
out
in
V
V
I
I
I
I
V
V
V
V
−55 to +150
D
D
D
D
DS
GS
DD
DD
DD
DD
Ratings
= 100µA, V
= 100µA, V
= 20mA, V
= 20mA, V
= 10V, V
= 8V, V
= 5V, V
= 5V, V
= 5V, V
= 5V, V
100
200
150
150
20
8
Note) The part number in the parenthesis shows conventional part number.
t
on
10%
Conditions
GS
GS
DS
GS
GS
GS
GS
DS
GS
DS
= 0 to 5V, R
= 5 to 0V, R
= 0
t
= 1V, R
= 5V, R
off
= 0
= 5V
= 5V, f = 1kHz
* 3
= 0
= V
90%
Unit
mW
Pulse measurement
mA
mA
°C
°C
V
V
10%
90%
GS
L
L
= 200Ω
= 200Ω
L
L
= 200Ω
= 200Ω
Marking Symbol: 3O
Internal Connection
1: Gate
2: Source
3: Drain
10°
0.3
min
100
1.5
4.5
40
20
20
G
(0.65) (0.65)
+0.1
–0.0
1
3
1.3
2.0
±0.1
±0.2
2
typ
R
1
R
2
max
SMini3-G1 Package
200
3.5
10
80
50
1
1
1
0.15
EIAJ: SC-70
+0.10
–0.05
unit: mm
D
S
Unit
µA
µA
mS
kΩ
µs
µs
V
V
Ω
V
V
291
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2SK665 Summary of contents
Page 1
... Silicon MOS FETs (Small Signal) 2SK0665 (2SK665) Silicon N-Channel MOS FET For switching I Features G High-speed switching G Small drive current owing to high input inpedance G High electrostatic breakdown voltage I Absolute Maximum Ratings Parameter Symbol Drain to Source voltage V Gate to Source voltage V Drain current I D Max drain current ...
Page 2
Silicon MOS FETs (Small Signal) 240 200 160 120 100 120 140 160 Ambient temperature Ta ( ˚ ...
Page 3
... No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. ...