2SK2523-01 Fuji Electric, 2SK2523-01 Datasheet - Page 2

• Manufacturer Part Number: 2SK2523-01
• Description: N-channel MOS-FET
• Manufacturer: Fuji Electric

N-channel MOS-FET
450V
> Characteristics
Typical Drain-Source On-State-Resistance
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98
Typical Output Characteristics
R
I
DS(on)
D
T
=f(V
Power Dissipation
ch
Typical Capacitances
C=f(V
=f(I
[°C]
DS
); 80µs pulse test; T
D
); 80µs pulse test; T
DS
4
7
10
P
); V
D
V
V
=f(Tc)
DS
DS
I
D
GS
[V]
[A]
[V]
=0V; f=1MHz
1
9A
C
=25°C
C
=25°C
60W
FAP-II Series
2SK2523-01
Safe Operation Area
Typical Gate Charge Characteristics
Typical Forward Transconductance
Drain-Source On-State Resistance
I
D
g
=f(V
fs
=f(I
DS
D
R
); 80µs pulse test; V
): D=0,01, Tc=25°C
DS(on)
V
12
V
DS
GS
=f(Qg); I
= f(T
[V]
Qg [nC]
T
ch
I
ch
2
D
8
[°C]
); I
[A]
5
D
D
=9A, Tc=25°C
=4,5A; V
DS
=25V; T
GS
=10V
ch
=25°C
Forward Characteristics of Reverse Diode
Transient Thermal impedance
I
D
Typical Transfer Characteristics
=f(V
Z
thch
GS
I
Gate Threshold Voltage
F
V
=f(V
=f(t) parameter:D=t/T
); 80µs pulse test; V
GS(th)
t [s]
SD
=f(T
); 80µs pulse test; V
T
ch
V
V
3
); I
ch
GS
SD
[°C]
D
[V]
=1mA; V
[V]
9
DS
6
=25V; T
DS
=V
GS
=0V
GS
ch
=25°C