FS10SM-12 Mitsubishi, FS10SM-12 Datasheet - Page 2

• Manufacturer Part Number: FS10SM-12
• Description: HIGH-SPEED SWITCHING USE
• Manufacturer: Mitsubishi

ELECTRICAL CHARACTERISTICS
PERFORMANCE CURVES
V
V
I
I
V
r
V
C
C
C
t
t
t
t
V
R
GSS
DSS
d (on)
r
d (off)
f
Symbol
DS (ON)
y
GS (th)
DS (ON)
SD
iss
oss
rss
th (ch-c)
(BR) DSS
(BR) GSS
fs
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
200
160
120
80
40
20
16
12
POWER DISSIPATION DERATING CURVE
0
8
4
0
0
0
DRAIN-SOURCE VOLTAGE V
Parameter
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
10
P
150W
50
D
=
(TYPICAL)
20
V
100
GS
(Tch = 25 C)
= 20V
30
10V
I
I
V
V
I
I
I
I
V
V
I
Channel to case
D
G
D
D
D
D
S
8V
GS
DS
DS
DD
= 5A, V
= 1mA, V
= 1mA, V
= 5A, V
= 5A, V
= 5A, V
= 100 A, V
T
Pulse Test
= 600V, V
= 25V, V
150
= 25V, V
= 200V, I
C
C
40
= 25°C
(°C)
DS
GS
GS
DS
GS
GS
DS
(V)
GS
6V
5V
= 10V
= 10V
= 10V
= 0V
D
DS
GS
200
= 0V
= 10V
DS
50
= 5A, V
= 0V, f = 1MHz
= 0V
= 0V
= 0V
Test conditions
GS
= 10V, R
GEN
10
10
10
10
= R
–1
5
3
2
7
5
3
2
7
5
3
2
7
5
8
6
4
2
0
1
0
2 3 5 7 10
0
MAXIMUM SAFE OPERATING AREA
GS
DRAIN-SOURCE VOLTAGE V
DRAIN-SOURCE VOLTAGE V
T
Single Pulse
C
= 50
OUTPUT CHARACTERISTICS
= 25°C
MITSUBISHI Nch POWER MOSFET
4
1
HIGH-SPEED SWITCHING USE
2 3 5 7 10
(TYPICAL)
8
V
Min.
GS
600
4.5
—
—
—
—
—
—
—
—
—
—
—
—
—
30
2
=20V
10V
8V
6V
12
2
2 3 5 7 10
Limits
1500
P
0.72
T
Pulse Test
Typ.
170
130
3.6
7.0
1.5
25
25
35
45
—
—
—
—
—
D
C
3
FS10SM-12
= 150W
= 25°C
16
DS
DS
tw=10µs
100µs
1ms
10ms
DC
(V)
(V)
5V
3
Max.
0.94
0.83
4.7
2.0
20
—
—
—
—
—
—
—
—
—
—
10
1
4
2
Feb.1999
Unit
C/W
mA
pF
pF
pF
ns
ns
ns
ns
V
V
V
V
S
V
A