SI1035X Vishay Siliconix, SI1035X Datasheet - Page 3

• Manufacturer Part Number: SI1035X
• Description: Complementary N- and P-Channel 20-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

Document Number: 71426
S-03201—Rev. A, 12-Mar-01
40
30
20
10
0.5
0.4
0.3
0.2
0.1
0.0
0
5
4
3
2
1
0
0
0.0
0
V
I
D
DS
= 150 mA
On-Resistance vs. Drain Current
= 10 V
50
1
V
DS
0.2
Q
Output Characteristics
– Drain-to-Source Voltage (V)
g
I
D
– Total Gate Charge (nC)
2
– Drain Current (mA)
100
Gate Charge
V
GS
0.4
3
= 1.8 V
150
V
GS
4
= 5 thru 1.8 V
0.6
200
V
V
5
GS
GS
1 V
= 2.5 V
= 4.5 V
250
_
6
0.8
New Product
1.60
1.40
1.20
1.00
0.80
0.60
600
500
400
300
200
100
100
80
60
40
20
–50
0
0
0.0
0
C
On-Resistance vs. Junction Temperature
rss
–25
V
f = 1 MHz
0.5
GS
4
V
GS
T
= 0 V
V
Transfer Characteristics
C
0
J
DS
oss
– Junction Temperature (_C)
– Gate-to-Source Voltage (V)
– Drain-to-Source Voltage (V)
1.0
Capacitance
25
8
V
I
T
C
D
Vishay Siliconix
GS
J
iss
= 200 mA
= –55_C
= 4.5 V
50
1.5
12
75
Si1035X
V
I
125_C
D
GS
2.0
= 175 mA
www.vishay.com
16
100
25_C
= 1.8 V
125
2.5
20
3