SI1035X Vishay Siliconix, SI1035X Datasheet - Page 5

• Manufacturer Part Number: SI1035X
• Description: Complementary N- and P-Channel 20-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

Document Number: 71426
S-03201—Rev. A, 12-Mar-01
V
GS
0.5
0.4
0.3
0.2
0.1
0.0
25
20
15
10
5
0
5
4
3
2
1
0
= 5 thru 2.5 V
0.0
0
0
V
I
D
DS
0.2
= 150 mA
V
= 10 V
1
On-Resistance vs. Drain Current
GS
200
V
DS
0.4
= 2.5 V
Q
Output Characteristics
V
g
– Drain-to-Source Voltage (V)
GS
I
– Total Gate Charge (nC)
D
2
0.6
= 1.8 V
– Drain Current (mA)
400
Gate Charge
0.8
3
600
1.0
4
V
GS
1.2
= 4.5 V
800
5
1.4
1.8 V
2 V
1000
_
1.6
6
New Product
500
400
300
200
100
120
100
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
0
0
–50
0.0
0
C
On-Resistance vs. Junction Temperature
rss
V
f = 1 MHz
–25
GS
0.5
V
4
= 0 V
GS
T
V
Transfer Characteristics
C
J
DS
oss
– Junction Temperature (_C)
0
– Gate-to-Source Voltage (V)
C
1.0
iss
– Drain-to-Source Voltage (V)
Capacitance
8
25
Vishay Siliconix
1.5
V
I
D
25_C
GS
= 150 mA
T
50
J
= 4.5 V
12
= –55_C
2.0
V
I
75
D
GS
Si1035X
= 125 mA
= 1.8 V
www.vishay.com
16
125_C
2.5
100
125
3.0
20
5