IDT72V295 Integrated Device Technology, IDT72V295 Datasheet - Page 17

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IDT72V295

Manufacturer Part Number
IDT72V295
Description
128k X 18 Supersync Fifo, 3.3v
Manufacturer
Integrated Device Technology
Datasheet

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NOTES:
1. t
2. LD = HIGH.
3. First word latency: t
NOTES:
1. t
2. LD = HIGH, OE = LOW, EF = HIGH.
Q
IDT72V295/72V2105 3.3V HIGH DENSITY CMOS
SUPERSYNC FIFO
D
Q
D
WCLK
RCLK
0
0
of WCLK and the rising edge of RCLK is less than t
edge of the RCLK and the rising edge of the WCLK is less than t
WEN
SKEW1
WCLK
SKEW1
0
0
REN
- Q
RCLK
- D
WEN
OE
REN
EF
- D
- Q
FF
n
n
n
n
is the minimum time between a rising WCLK edge and a rising RCLK edge to guarantee that EF will go HIGH (after one RCLK cycle plus t
is the minimum time between a rising RCLK edge and a rising WCLK edge to guarantee that FF will go high (after one WCLK cycle pus t
t
ENS
DATA IN OUTPUT REGISTER
t
ENS
SKEW1
t
TM
SKEW1
t
t
OLZ
ENH
131,072 x 18, 262,144 x 18
+ 1*T
t
REF
t
Figure 8. Read Cycle, Empty Flag and First Data Word Latency Timing (IDT Standard Mode)
A
t
OE
(1)
RCLK
t
+ t
SKEW1
t
t
ENS
ENH
REF
t
DS
t
A
D
.
(1)
0
1
NO WRITE
Figure 7. Write Cycle and Full Flag Timing (IDT Standard Mode)
NO OPERATION
t
t
DHS
ENH
SKEW1
LAST WORD
1
, then EF deassertion may be delayed one extra RCLK cycle.
2
SKEW1
t
WFF
, then the FF deassertion may be delayed one extra WCLK cycle.
t
OHZ
t
t
DS
t
t
DS
ENS
CLKH
D
D
1
NO OPERATION
X
t
WFF
t
t
ENH
DH
17
DATA READ
t
t
DH
CLK
2
t
CLKL
t
CLKH
t
t
REF
ENS
t
OLZ
t
SKEW1
COMMERCIAL AND INDUSTRIAL TEMPERATURE RANGES
t
CLK
(1)
t
CLKL
t
ENS
t
ENH
LAST WORD
t
A
1
NO WRITE
t
ENH
t
A
WFF
REF
2
). If the time between the rising edge
). If the time between the rising
NEXT DATA READ
t
ENS
t
t
WFF
DS
D
0
D
X
+1
t
REF
t
t
ENH
A
4668 drw 10
t
4668 drw 11
DH
t
WFF
D
1

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