IDT70261S Integrated Device Technology, IDT70261S Datasheet - Page 9

• Manufacturer Part Number: IDT70261S
• Description: High-speed 16k X 16 Dual-port Static Ram With Interrupt
• Manufacturer: Integrated Device Technology

NOTES:
1. R/W or CE or UB and LB = V
2. A write occurs during the overlap (t
3. t
4. During this period, the I/O pins are in the output state and input signals must not be applied.
5. If the CE or SEM = V
6. Timing depends on which enable signal is asserted last, CE or R/W.
7. This parameter is guaranteed by device characterization, but is not production tested. Transition is measured 0mV from steady state with the Output Test Load (Figure
8. If OE = V
9. To access RAM, CE = V
CE
CE
IDT70261S/L
High-Speed 16K x 16 Dual-Port Static RAM with Interrupt
ADDRESS
ADDRESS
DATA
2).
placed on the bus for the required t
specified t
UB
UB
WR
DATA
or
DATA
or
is measured from the earlier of CE or R/W (or SEM or R/W) going V
or
or
SEM
SEM
R/
R/
OUT
OE
LB
LB
W
W
IN
IN
IL
WP
(9)
(9)
(9)
during R/W controlled write cycle, the write pulse width must be the larger of t
(9)
.
IL
transition occurs simultaneously with or after the R/W = V
IL
and SEM = V
IH
t
during all address transitions.
AS
t
DW
EW
AS
(6)
. If OE = V
(6)
or t
IH
WP
(4)
. To access semaphore, CE = V
) of a CE = V
IH
during an R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as the
t
WZ
IL
(7)
and a R/W = V
t
t
AW
AW
t
WC
t
WC
t
t
EW
WP
IH
(2)
(2)
IH
to the end of write cycle.
IL
6.42
and SEM = V
9
for memory array writing cycle.
IL
transition, the outputs remain in the High-impedance state.
CE UB LB
t
t
DW
DW
W
IL
WP
. t
EW
or (t
must be met for either condition.
Industrial and Commercial Temperature Ranges
t
WR
WZ
+ t
(3)
DW
t
t
t
DH
DH
) to allow the I/O drivers to turn off and data to be
WR
t
OW
(3)
t
HZ
(7)
(4)
3039 drw 08
3039 drw 07