V4070 EM Microelectronic, V4070 Datasheet - Page 3

• Manufacturer Part Number: V4070
• Description: Crypto Contactless Identification Device
• Manufacturer: EM Microelectronic

Electrical Characteristics
Operating Conditions
V
Timing Characteristics
RF periods respresent periods of the carrier frequency emitted by the transceiver unit. For example, if 125 kHz
is used, the Read bit period would be: 1/125’000*32 = 256 s.
1) Maximum voltage is defined by forcing 10mA on Coil1-Coil2
Parameter
Supply voltage
EEPROM write voltage
Supply current/read
Supply current/read/H
Supply current/write
Supply current/write/H
Modulator voltage drop
Resonance capacitor
Capacitor temp. coeff
Capacitor tolerance/wafer
POR level high
Clock extractor input min.
Clock extractor input max.
MONOFLOP delay
EEPROM data endurance
EEPROM retention
Parameter
Power on Reset Time
Read Bit Period
LIW/ACK/NACK pattern
Duration
Duration of ID
Divergence-Time
Authentication-Time
WRITE Access Time
EEPROM write Time
DD
= 2.5V V
SS
EM MICROELECTRONIC-MARIN SA
= 0V
f
coil
= 125 kHz Sine wave
Symbol
Symbol
TOL
V
V
T
TK
V
V
V
V
I
N
T
t
t
I
T
t
t
t
t
t
clkmax
I
I
C
clkmin
r d H
w r H
mono
auth
w e e
por
rdb
patt
rID
w a
r d
w r
DD
EE
ON
prh
div
cy
ret
r
Cr
Cr
Read Mode
Read Mode V
Read Mode V
Write Mode V
-40 C<T<85 C
Write Mode V
V
Icoil = 100 A
V
Icoil = 5mA
Rising supply
Min for clock extraction
Max for clock extraction
Erase all / Write all
T
cycles
RF periods
RF periods
RF periods
RF periods
RF periods
RF periods
RF periods, V
-40 C to 85 C
op
(Coil1-VSS)
(Coil1-VSS)
= 55 C after 1000
Conditions
Conditions
& V
& V
(Coil2-VSS)
(Coil2-VSS)
DD
DD
DD
DD
DD
=2.0V
=5.0V
=3.0V
=5.0V
= 3V
V
coil
= 1Vpp
V a l u e
M i n .
1000
1024
3744
3072
170
600
160
224
128
-75
40
10
32
-2
2
3
1
T
periods
periods
periods
periods
periods
periods
periods
T y p .
Unit
op
200
Table 3
2.2
= 25 C
s
M a x .
230
0.5
2.5
2.8
10
50
80
75
50
80
1)
5
2
V4070
ppm/K
cycles
mVpp
years
Unit
Table 2
Vpp
pF
%
V
V
V
V
V
A
A
A
A
s
3