BYW3 Vishay Intertechnology, BYW3 Datasheet

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BYW3

Manufacturer Part Number
BYW3
Description
Fast Avalanche Sinterglass Diode
Manufacturer
Vishay Intertechnology
Datasheet

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Manufacturer
Quantity
Price
Part Number:
BYW30-100
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Part Number:
BYW30-100R
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Part Number:
BYW30-150
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Part Number:
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Fast Avalanche Sinterglass Diode
\
Features
Applications
Fast rectification and switching diode for example for
TV-line output circuits and switch mode power supply
Mechanical Data
Case: Sintered glass case, SOD 57
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Parts Table
Absolute Maximum Ratings
T
Document Number 86048
Rev. 5, 07-Jan-03
VISHAY
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• Soft recovery characteristics
BYW32
BYW33
BYW34
BYW35
BYW36
Reverse voltage = Repetitive peak reverse
voltage
Peak forward surge current
Repetitive peak forward current
Average forward current
Junction and storage temperature range
Non repetitive reverse avalanche energy
amb
= 25 °C, unless otherwise specified
Part
Parameter
V
V
V
V
V
R
R
R
R
R
= 200 V; I
= 300 V; I
= 400 V; I
= 500 V; I
= 600 V; I
FAV
FAV
FAV
FAV
FAV
= 2 A
= 2 A
= 2 A
= 2 A
= 2 A
Type differentiation
see electrical characteristics
see electrical characteristics
see electrical characteristics
see electrical characteristics
see electrical characteristics
t
ϕ = 180 °
I
p
(BR)R
= 10 ms, half sinewave
= 0.4 A
Test condition
Mounting Position: Any
Weight: 370 mg, (max. 500 mg)
SOD57
SOD57
SOD57
SOD57
SOD57
BYW32 to BYW36
Sub type
BYW32
BYW33
BYW34
BYW35
BYW36
Vishay Semiconductors
Package
T
Symbol
V
V
V
V
V
j
V
V
V
V
V
I
I
I
FSM
FRM
= T
E
RRM
RRM
RRM
RRM
RRM
FAV
R
R
R
R
R
R
=
=
=
=
=
stg
- 55 to +
949539
Value
200
300
400
500
600
175
www.vishay.com
50
12
10
2
Unit
mJ
°C
V
V
V
V
V
A
A
A
1

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BYW3 Summary of contents

Page 1

... A SOD57 Test condition see electrical characteristics see electrical characteristics see electrical characteristics see electrical characteristics see electrical characteristics ms, half sinewave p ϕ = 180 ° 0.4 A (BR)R BYW32 to BYW36 Vishay Semiconductors 949539 Package Sub type Symbol Value Unit BYW32 V = 200 R V RRM ...

Page 2

... BYW32 to BYW36 Vishay Semiconductors Maximum Thermal Resistance °C, unless otherwise specified amb Parameter Junction ambient mm board with spacing 25 mm Electrical Characteristics °C, unless otherwise specified amb Parameter Forward voltage Reverse current Reverse recovery time ...

Page 3

... Figure 6. Diode Capacitance vs. Reverse Voltage Single pulse – Figure 7. Thermal Response ∅ 3.6 max. 26 min. 4.2 max. BYW32 to BYW36 Vishay Semiconductors f=1MHz 1.0 10.0 100.0 V – Reverse Voltage ( =600V RRM R =100K/W thJA T =25°C amb 70°C 45°C 50°C 100° ...

Page 4

... BYW32 to BYW36 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment ...

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