BYW8 Vishay Intertechnology, BYW8 Datasheet
BYW8
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BYW8 Summary of contents
Page 1
... Test condition see electrical characteristics see electrical characteristics see electrical characteristics see electrical characteristics see electrical characteristics ms, half sinewave µs, half sine wave 175 ° BYW82 to BYW86 Vishay Semiconductors 949588 Package Sub type Symbol Value Unit BYW82 V = 200 R V ...
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... BYW82 to BYW86 Vishay Semiconductors Parameter Pulse energy in avalanche mode, non repetitive (inductive load switch off *t-rating Junction and storage temperature range Maximum Thermal Resistance °C, unless otherwise specified amb Parameter Junction ambient mm board with spacing 25mm ...
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... Figure 6. Diode Capacitance vs. Reverse Voltage V =1000V RRM 0 1 – FRM Forward Current ( A ) Figure 7. Thermal Response BYW82 to BYW86 Vishay Semiconductors RRM P –Limit R @100 –Limit R @80 100 125 150 175 – Junction Temperature ( ° ...
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... BYW82 to BYW86 Vishay Semiconductors Package Dimensions in mm Sintered Glass Case Cathode Identification SOD 64 Weight max. 1.0g 26 min. www.vishay.com 4 ∅ 4.3 max. technical drawings according to DIN specifications 26 min. 4.2 max. VISHAY ∅ 1.35 max. 94 9587 Document Number 86051 Rev. 5, 07-Jan-03 ...
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... Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 86051 Rev. 5, 07-Jan-03 and may do so without further notice. BYW82 to BYW86 Vishay Semiconductors www.vishay.com 5 ...