FLL200IB-3 Eudyna Devices, FLL200IB-3 Datasheet
FLL200IB-3
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FLL200IB-3 Summary of contents
Page 1
... Proven Reliability • Hermetically Sealed Package DESCRIPTION The FLL200IB-1, FLL200IB-2, FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. Fujitsu’ ...
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... FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET 100 DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 8000 6000 4000 2000 POWER DERATING CURVE 100 150 Case Temperature (°C) www.DataSheet.co. =0V -0.5V -1.0V -1. Drain-Source Voltage (V) 2 200 -2.0V 10 Datasheet pdf - http://www.DataSheet4U.net/ ...
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... Download S-Parameters, click here V DS =10V I DS ≈ 0.6 I DSS f = 1.5 GHz P out 50 40 η add Input Power (dBm) 3 FLL200IB +90° 1GHz 1GHz 0° 1.1 2.5 1.3 1.2 1.4 1.3 1.4 -90° S22 MAG ANG -5 ...
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... FLL200IB-2 L-Band Medium & High Power GaAs FET +j50 4GHz 1.5 1.6 4GHz +j25 1.0GHz 3.5 1.5 +j10 2.4 1.0GHz 2.3 2 50Ω 10 3.0 2.8 3.0 2.9 -j10 2.9 2.8 -j25 -j50 FREQUENCY S11 (MHZ) MAG ANG 500 .944 157.3 1000 .937 127.4 1500 .880 90.3 1700 .791 68.9 2000 .379 27.8 2300 .309 82.4 2500 ...
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... Download S-Parameters, click here V DS =10V I DS ≈ 0.6 I DSS f = 2.6 GHz P out 50 40 η add Input Power (dBm) 5 FLL200IB +90° 2.9 4 2.6 2 1.5GHz 0.06 0.10 3.0 0° SCALE FOR | 2.9 3.1 2.0 2.1 2.2 2.0 2.1 2.2 -90° ...
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... FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET 2-R 1.6±0.15 (0.063) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House ...