CY7C421-20JXC Cypress Semiconductor Corp, CY7C421-20JXC Datasheet - Page 13
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CY7C421-20JXC
Manufacturer Part Number
CY7C421-20JXC
Description
IC ASYNC FIFO MEM 512X9 32-PLCC
Manufacturer
Cypress Semiconductor Corp
Series
CY7Cr
Specifications of CY7C421-20JXC
Access Time
10ns
Memory Size
4.6K (512 x 9)
Package / Case
32-PLCC
Function
Asynchronous
Data Rate
50MHz
Voltage - Supply
3.3V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Number Of Circuits
2
Data Bus Width
9 bit
Bus Direction
Unidirectional
Timing Type
Asynchronous
Organization
512 K x 9
Supply Voltage (max)
5.5 V
Supply Voltage (min)
4.5 V
Maximum Operating Current
55 mA
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Mounting Style
SMD/SMT
Configuration
Dual
Density
4.5Kb
Access Time (max)
20ns
Word Size
9b
Sync/async
Asynchronous
Expandable
Yes
Package Type
PLCC
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
5V
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Supply Current
55mA
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
32
Rohs Compliant
YES
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
428-2911-5
CY7C421-20JXC
CY7C421-20JXC
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY7C421-20JXC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Part Number:
CY7C421-20JXC
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Company:
Part Number:
CY7C421-20JXCT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Architecture
The CY7C420/1, CY7C424/5, CY7C428/9, CY7C432/3 FIFOs
consist of an array of 256, 512, 1024, 2048, 4096 words of 9 bits
each (implemented by an array of dual-port RAM cells), a read
pointer, a write pointer, control signals (W, R, XI, XO, FL, RT,
MR), and Full, Half Full, and Empty flags.
Dual-Port RAM
The dual-port RAM architecture refers to the basic memory cell
used in the RAM. The cell itself enables the read and write opera-
tions to be independent of each other, which is necessary to
achieve truly asynchronous operation of the inputs and outputs.
A second benefit is that the time required to increment the read
and write pointers is much less than the time required for data
propagation through the memory, which is the case if memory is
implemented using the conventional register array architecture.
Resetting the FIFO
Upon power up, the FIFO must be reset with a Master Reset
(MR) cycle. This causes the FIFO to enter the empty condition
signified by the Empty flag (EF) being LOW, and both the Half
Full (HF) and Full flags (FF) being HIGH. Read (R) and write (W)
must be HIGH t
of MR for a valid reset cycle. If reading from the FIFO after a reset
cycle is attempted, the outputs are in the high impedance state.
Writing Data to the FIFO
The availability of at least one empty location is indicated by a
HIGH FF. The falling edge of W initiates a write cycle. Data
appearing at the inputs (D
rising edge of W are stored sequentially in the FIFO.
The EF LOW-to-HIGH transition occurs t
LOW-to-HIGH transition of W for an empty FIFO. HF goes LOW
t
Half Full. Therefore, the HF is active after the FIFO is filled to half
its capacity plus one word. HF remains LOW while less than one
half of total memory is available for writing. The LOW-to-HIGH
transition of HF occurs t
FIFO goes from half full +1 to half full. HF is available in
standalone and width expansion modes. FF goes LOW t
after the falling edge of W, during the cycle in which the last
available location is filled. Internal logic prevents overrunning a
full FIFO. Writes to a full FIFO are ignored and the write pointer
is not incremented. FF goes HIGH tRFF after a read from a full
FIFO.
Document #: 38-06001 Rev. *F
WHF
after the falling edge of W following the FIFO actually being
RPW
/t
WPW
RHF
before and t
0
–D
after the rising edge of R when the
8
) t
SD
before and t
RMR
after the rising edge
WEF
after the first
HD
after the
WFF
Reading Data from the FIFO
The falling edge of R initiates a read cycle if the EF is not LOW.
Data outputs (Q
between read operations (R HIGH), when the FIFO is empty, or
when the FIFO is not the active device in the depth expansion
mode.
When one word is in the FIFO, the falling edge of R initiates a
HIGH-to-LOW transition of EF. The rising edge of R causes the
data outputs to go to the high impedance state and remain such
until a write is performed. Reads to an empty FIFO are ignored
and do not increment the read pointer. From the empty condition,
the FIFO can be read t
The retransmit feature is beneficial when transferring packets of
data. It enables the receiver to acknowledge receipt of data and
retransmit, if necessary.
The Retransmit (RT) input is active in the standalone and width
expansion modes. The retransmit feature is intended for use
when a number of writes equal to or less than the depth of the
FIFO have occurred since the last MR cycle. A LOW pulse on RT
resets the internal read pointer to the first physical location of the
FIFO. R and W must both be HIGH while and t
retransmit is LOW. With every read cycle after retransmit, previ-
ously accessed data and not previously accessed data is read
and the read pointer is incremented until it is equal to the write
pointer. Full, Half Full, and Empty flags are governed by the
relative locations of the read and write pointers and are updated
during a retransmit cycle. Data written to the FIFO after activation
of RT are also transmitted. FIFO, up to the full depth, can be
repeatedly retransmitted.
Standalone/Width Expansion Modes
Standalone and width expansion modes are set by grounding
Expansion In (XI) and tying First Load (FL) to V
expanded in width to provide word widths greater than nine in
increments of nine. During width expansion mode, all control line
inputs are common to all devices, and flag outputs from any
device can be monitored.
Depth Expansion Mode
Depth expansion mode
when, during a MR cycle, Expansion Out (XO) of one device is
connected to Expansion In (XI) of the next device, with XO of the
last device connected to XI of the first device. In the depth
expansion mode the First Load (FL) input, when grounded,
indicates that this part is the first to be loaded. All other devices
must have this pin HIGH. To enable the correct FIFO, XO is
pulsed LOW when the last physical location of the previous FIFO
is written to and pulsed LOW again when the last physical
location is read. Only one FIFO is enabled for read and one for
write at any particular time. All other devices are in standby.
FIFOs can also be expanded simultaneously in depth and width.
Consequently, any depth or width FIFO can be created of word
widths in increments of 9. When expanding in depth, a composite
FF must be created by ORing the FFs together. Likewise, a
composite EF is created by ORing the EFs together. HF and RT
functions are not available in depth expansion mode.
0
to Q
WEF
8
(see
) are in a high impedance condition
after a valid write.
Figure
on page 14
CC
CY7C421
. FIFOs can be
Page 13 of 21
)
is entered
RTR
after
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