DESCRIPTION
Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically
sealed metal case. The 4N22A, 4N23A and 4N24A can be tested to customer specifications, as well as to MIL-PRF-19500
JAN, JANS, JANTX, and JANTXV quality levels.
*ABSOLUTE MAXIMUM RATINGS
Input to Output Voltage.............................................................................................................................................................
Emitter-Collector Voltage..............................................................................................................................................................4V
Collector-Emitter Voltage............................................................................................................................................................35V
Collector-Base Voltage ...............................................................................................................................................................35V
Reverse Input Voltage .................................................................................................................................................................2V
Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1) ....................................... 40mA
Peak Forward Input Current (Value applies for tw
Continuous Collector Current ................................................................................................................................................. 50mA
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2) ................................... 300mW
Storage Temperature............................................................................................................................................. -65°C to +125°C
Operating Free-Air Temperature Range ............................................................................................................... -55°C to +125°C
Lead Solder Temperature (1/16” (1.6mm) from case for 10 seconds) ..................................................................................240°C
Notes:
1.
2.
* JEDEC registered data
Features:
•
•
•
•
•
•
4N22A
4N23A
4N24A
Derate linearly to 125°C free-air temperature at the rate of 0.67 mA/°C above 65°C.
Derate linearly to 125°C free-air temperature at the rate of 5 mW/°C.
0.305 [7.75]
0.335 [8.51]
Collector is electrically isolated from the case.
Overall current gain...1.5 typical (4N24A)
Base lead provided for conventional transistor
biasing
Rugged package
High gain, high voltage transistor
+1kV electrical isolation
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION
NOTE: ALL LINEAR DIMENSIONS ARE IN INCHES (MILLIMETERS)
JAN, JANTX, JANTXV,
0.040 [1.02]
0.185 [4.70]
0.155 [3.94]
MAX.
0.016Ø [0.41]
0.019Ø [0.48]
Package Dimensions
0.500 [12.70]
6 LEADS
MIN.
www.micropac.com
SINGLE CHANNEL OPTOCOUPLERS
0.022Ø [5.08]
<
1
µ
0.034 [0.864]
0.028 [0.711]
s, PRR
3
2
TO5
5
1
E-MAIL: optosales@microropac.com
3 - 10
6
7
45°
<
•
725 E. Walnut St., Garland, TX 75040
300 pps) .................................................................................1A
Applications:
•
•
•
•
•
Eliminate ground loops
Level shifting
Line receiver
Switching power supplies
Motor control
0.045 [1.14]
0.029 [0.73]
7
5
K
A
•
(972) 272-3571
OPTOELECTRONIC PRODUCTS
Schematic Diagram
Mii
•
DIVISION
Fax (972) 487-6918
±
B
C
E
1kV
3
1
2