DESCRIPTION
Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically
sealed metal case. The 4N22, 4N23 and 4N24’s can be tested to customer specifications, as well as to MIL-PRF-19500 JAN,
JANS, JANTX and JANTXV quality levels.
*ABSOLUTE MAXIMUM RATINGS
Input to Output Voltage........................................................................................................................................................
Emitter-Collector Voltage.......................................................................................................................................................... 4V
Collector-Emitter Voltage (
Collector-Base Voltage (
Reverse Input Voltage ............................................................................................................................................................. 2V
Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1) ....................................40mA
Peak Forward Input Current (Value applies for tw
Continuous Collector Current ..............................................................................................................................................50mA
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2) ................................300mW
Storage Temperature..........................................................................................................................................-65°C to +125°C
Operating Free-Air Temperature Range ............................................................................................................-55°C to +125°C
Lead Solder Temperature (1/16” (1.6mm) from case for 10 seconds) .............................................................................. 240°C
Notes:
1.
2.
* JEDEC registered data
Features:
•
•
•
•
•
4N22
4N23
4N24
0.305 [7.75]
0.335 [8.51]
Derate linearly to 125°C free-air temperature at the rate of 0.67 mA/°C above 65°C.
Derate linearly to 125°C free-air temperature at the rate of 5 mW/°C above 65°C.
Overall current gain...1.5 typical (4N24)
Base lead provided for conventional transistor
biasing
Rugged package
High gain, high voltage transistor
+1kV electrical isolation
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION
NOTE: ALL LINEAR DIMENSIONS ARE IN INCHES (MILLIMETERS)
JAN, JANTX, JANTXV,
0.040 [1.02]
0.185 [4.70]
0.155 [3.94]
V
MAX.
CEO
V
CEO
0.016Ø [0.41]
0.019Ø [0.48]
,
0.500 [12.70]
Package Dimensions
6 LEADS
I
F
,
MIN.
= 0
I
F
= 0
) ....................................................................................................................................... 35V
) .................................................................................................................................... 35V
www.micropac.com
SINGLE CHANNEL OPTOCOUPLERS
0.022Ø [5.08]
<
1
0.034 [0.864]
0.028 [0.711]
µ
s PRR
3
2
TO5
5
1
6
E-MAIL: optosales@micropac.com
3 - 7
7
<
45°
•
300 pps) .............................................................................. 1A
725 E. Walnut St., Garland, TX 75040
Applications:
•
•
•
•
•
Eliminate ground loops
Level shifting
Line receiver
Switching power supplies
Motor control
0.045 [1.14]
0.029 [0.73]
7
5
•
K
A
OPTOELECTRONIC PRODUCTS
(972) 272-3571
Schematic Diagram
Mii
DIVISION
•
Fax (972) 487-6918
±
1kV
B
C
E
3
1
2