JANSR2N7400 Intersil Corporation, JANSR2N7400 Datasheet

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JANSR2N7400

Manufacturer Part Number
JANSR2N7400
Description
8A/ 200V/ 0.440 Ohm/ Rad Hard/ N-Channel Power MOSFET
Manufacturer
Intersil Corporation
Datasheet
Formerly FSS230R4
June 1998
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
Features
• 8A, 200V, r
• Total Dose
• Single Event
• Dose Rate
• Photo Current
• Neutron
Ordering Information
Die Family TA17637.
MIL-PRF-19500/632.
Package
JANSR2N7400
- Meets Pre-RAD Specifications to 100K RAD (Si)
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
- Typically Survives 3E9 RAD (Si)/s at 80% BV
- Typically Survives 2E12 if Current Limited to I
- 3.0nA Per-RAD(Si)/s Typically
- Maintain Pre-RAD Specifications
- Usable to 1E14 Neutrons/cm
PART NUMBER
V
V
for 1E13 Neutrons/cm
DS
GS
up to 80% of Rated Breakdown and
of 10V Off-Bias
DS(ON)
= 0.440
TO-257AA
PACKAGE
2
|
Copyright
2
©
Intersil Corporation 1999
JANSR2N7400
CAUTION: Beryllia Warning per MIL-S-19500
2
BRAND
with
DSS
refer to package specifications.
DM
JANSR2N7400
TO-257AA
2-58
Description
The Discrete Products Operation of Intersil Corporation has
developed a series of Radiation Hardened MOSFETs specif-
ically designed for commercial and military space applica-
tions. Enhanced Power MOSFET immunity to Single Event
Effects (SEE), Single Event Gate Rupture (SEGR) in particu-
lar, is combined with 100K RADS of total dose hardness to
provide devices which are ideally suited to harsh space envi-
ronments. The dose rate and neutron tolerance necessary
for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regula-
tion, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be
operated directly from integrated circuits.
Also available at other radiation and screening levels. See us
on the web, Intersil’s home page: http://www.intersil.com.
Contact your local Intersil Sales Office for additional
information.
Symbol
S
D
8A, 200V, 0.440 Ohm, Rad Hard,
G
N-Channel Power MOSFET
File Number
4373.1

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JANSR2N7400 Summary of contents

Page 1

... This type can be operated directly from integrated circuits. Also available at other radiation and screening levels. See us on the web, Intersil’s home page: http://www.intersil.com. BRAND Contact your local Intersil Sales Office for additional JANSR2N7400 information. Symbol TO-257AA S D CAUTION: Beryllia Warning per MIL-S-19500 refer to package specifi ...

Page 2

... d(OFF 20V V g(TOT 12V g(12 g(TH 2-59 JANSR2N7400 UNITS 200 DS 200 DGR 0. -55 to 150 J STG 300 L 4.4 MIN TYP MAX ...

Page 3

... FLUENCE = 1E5 IONS/cm (TYPICAL) 200 160 120 TEMP = -10 -15 V (V) GS FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA JANSR2N7400 TEST CONDITIONS 8A, dI /dt = 100A Unless Otherwise Specified C SYMBOL TEST CONDITIONS 1mA ...

Page 4

... FIGURE 5. BASIC GATE CHARGE WAVEFORM 10 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 0.001 - FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE JANSR2N7400 Unless Otherwise Specified (Continued OPERATION IN THIS AREA MAY BE LIMITED BY r 0.1 100 150 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 2.5 PULSE DURATION = 250ms ...

Page 5

... VARY t TO OBTAIN P R REQUIRED PEAK FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT V = 12V FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT JANSR2N7400 Unless Otherwise Specified (Continued) STARTING STARTING T = 150 ( (1.3 RATED DSS ...

Page 6

... Bias (Drain Stress) PDA Final Electrical Tests (Note 9) NOTE: 9. Test limits are identical pre and post burn-in. Additional Screening Tests PARAMETER Safe Operating Area Unclamped Inductive Switching Thermal Response Thermal Impedance JANSR2N7400 Unless Otherwise Specified SYMBOL TEST CONDITIONS 20V GSS GS ...

Page 7

... Subgroups A2, A3, A4, A5 and A7 Data G. Group B - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups B1, B3, B4, B5 and B6 Data H. Group C - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups C1, C2, C3 and C6 Data I. Group D - Attributes Data Sheet - Hi-Rel Lot Traveler - Pre and Post Radiation Data JANSR2N7400 2-64 ...

Page 8

... No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 JANSR2N7400 SYMBOL MIN A 0.190 A ...

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