JANSR2N7401 Intersil Corporation, JANSR2N7401 Datasheet

JANSR2N7401

Manufacturer Part Number

JANSR2N7401

Description

6A/ 250V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFET

Manufacturer

Intersil Corporation

Datasheet

1.JANSR2N7401.pdf (8 pages)

Current page: 1 of 8
Download datasheet (56Kb)

Formerly FSS234R4

6A, 250V, 0.600 Ohm, Rad Hard,

N-Channel Power MOSFET

The Discrete Products Operation of Intersil has developed a

series of Radiation Hardened MOSFETs speciﬁcally

designed for commercial and military space applications.

Enhanced Power MOSFET immunity to Single Event Effects

(SEE), Single Event Gate Rupture (SEGR) in particular, is

combined with 100K RADS of total dose hardness to provide

devices which are ideally suited to harsh space environ-

ments. The dose rate and neutron tolerance necessary for

military applications have not been sacriﬁced.

The Intersil portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings. Numer-

ous packaging options are also available.

This MOSFET is an enhancement-mode silicon-gate power

ﬁeld-effect transistor of the vertical DMOS (VDMOS) struc-

ture. It is specially designed and processed to be radiation

tolerant. The MOSFET is well suited for applications

exposed to radiation environments such as switching regula-

tion, switching converters, motor drives, relay drivers and

drivers for high-power bipolar switching transistors requiring

high speed and low gate drive power. This type can be oper-

ated directly from integrated circuits.

Also available at other radiation and screening levels. See us

on the web, Intersil’ home page: http://www.semi.inter-

sil.com. Contact your local Intersil Sales Office for additional

information.

Ordering Information

Die Family TA17638.

MIL-PRF-19500/632.

Package

JANSR2N7401

PART NUMBER

TO-257AA

PACKAGE

4-1

JANSR2N7401

CAUTION: Beryllia Warning per MIL-S-19500

BRAND

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

refer to package speciﬁcations.

TO-257AA

http://www.intersil.com or 407-727-9207

Features

• 6A, 250V, r

• Total Dose

• Single Event

• Dose Rate

• Photo Current

• Neutron

Symbol

- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm

- Typically Survives 3E9 RAD (Si)/s at 80% BV

- Typically Survives 2E12 if Current Limited to I

- 4.0nA Per-RAD(Si)/s Typically

- Maintain Pre-RAD Specifications for 1E13 Neutrons/cm

- Usable to 1E14 Neutrons/cm

to 80% of Rated Breakdown and V

August 1998

DS(ON)

= 0.600

JANSR2N7401

File Number 4571

Intersil Corporation 1999

of 10V Off-Bias

with V

DSS

Related parts for JANSR2N7401

JANSR2N7401 Summary of contents

Page 1

... Symbol BRAND JANSR2N7401 TO-257AA CAUTION: Beryllia Warning per MIL-S-19500 refer to package speciﬁcations. CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 JANSR2N7401 August 1998 File Number 4571 = 0.600 DS(ON) 2 with V of 10V Off-Bias GS DSS DM 2 © ...

Page 2

... 7 d(OFF 20V g(TOT 12V g(12 g(TH JANSR2N7401 250 DS 250 DGR 0. -55 to 150 J STG 300 L __ MIN TYP = 0V 250 ...

Page 3

... LET = 37MeV/mg/cm 300 2 FLUENCE = 1E5 IONS/cm (TYPICAL) 200 100 o TEMP = -10 -15 V (V) GS FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA 4-3 JANSR2N7401 TEST CONDITIONS 6A,dI /dt = 100A Unless Otherwise Speciﬁed C SYMBOL TEST CONDITIONS ...

Page 4

... G CHARGE FIGURE 5. BASIC GATE CHARGE WAVEFORM 10 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 - FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE 4-4 JANSR2N7401 Unless Otherwise Speciﬁed (Continued 0.1 100 150 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 2.5 2.0 1.5 1.0 0.5 0.0 FIGURE 6. NORMALIZED r NOTES: DUTY FACTOR PEAK T ...

Page 5

... TO OBTAIN P 50 REQUIRED PEAK 20V FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT V = 12V FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT 4-5 JANSR2N7401 Unless Otherwise Speciﬁed (Continued) 30 STARTING STARTING T = 150 ( (1.3 RATED DSS (L/R) ln [(I * ...

Page 6

... Bias (Drain Stress) PDA Final Electrical Tests (Note 9) NOTE: 9. Test limits are identical pre and post burn-in. Additional Screening Tests PARAMETER Safe Operating Area Unclamped Inductive Switching Thermal Response Thermal Impedance 4-6 JANSR2N7401 Unless Otherwise Speciﬁed C SYMBOL TEST CONDITIONS 20V GSS GS ...

Page 7

... Subgroups A2, A3, A4, A5 and A7 Data G. Group B - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups B1, B3, B4, B5 and B6 Data H. Group C - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups C1, C2, C3 and C6 Data I. Group D - Attributes Data Sheet - Hi-Rel Lot Traveler - Pre and Post Radiation Data 4-7 JANSR2N7401 ...

Page 8

... No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Ofﬁce Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 4-8 JANSR2N7401 SYMBOL Øb Øb ...

Related keywords

JANSR2N7401 datasheet
JANSR2N7401 data sheet
JANSR2N7401 pdf datasheet
JANSR2N7401 component
JANSR2N7401 part
JANSR2N7401 distributor
JANSR2N7401 RoHS
JANSR2N7401 datasheet download