JANSR2N7406 Intersil Corporation, JANSR2N7406 Datasheet - Page 3

• Manufacturer Part Number: JANSR2N7406
• Description: 24A/ 200V/ 0.110 Ohm/ Rad Hard/ N-Channel Power MOSFET
• Manufacturer: Intersil Corporation

Source to Drain Diode Specifications
Electrical Specifications up to 100K RAD
NOTES:
Single Event Effects (SEB, SEGR)
NOTES:
Typical Performance Curves
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
Forward Voltage
Reverse Recovery Time
Drain to Source Breakdown Volts
Gate to Source Threshold Volts
Gate to Body Leakage
Zero Gate Leakage
Drain to Source On-State Volts
Drain to Source On Resistance
Single Event Effects Safe Operating
Area
1. Pulse test, 300 s Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
240
200
160
120
80
40
0
PARAMETER
0
TEMP = 25
FLUENCE = 1E5 IONS/cm
TEST
PARAMETER
-5
LET = 26MeV/mg/cm
LET = 37MeV/mg/cm
o
C
2
(typical), T = 25
-10
V
GS
(Note 3)
(Note 3)
(Notes 2, 3)
(Note 3)
(Notes 1, 3)
(Notes 1, 3)
SYMBOL
(V)
V
2
2
t
2
SD
-15
rr
, RANGE = 43
, RANGE = 36
(TYPICAL)
SYMBOL
SEESOA
o
C.
(Note 4)
Unless Otherwise Specified
GS
I
I
-20
SD
SD
= 12V, V
= 24A
= 24A,dI
T
r
SYMBOL
V
V
DS(ON)12
C
JANSR2N7406
BV
DS(ON)
GS(TH)
I
I
SPECIES
= 25
GSS
DSS
TEST CONDITIONS
DSS
ION
Br
Br
Br
Br
-25
Ni
DS
o
SD
C, Unless Otherwise Specified
2-90
= 0V and V
/dt = 100A/ s
ENVIRONMENT (NOTE 5)
V
V
V
V
V
V
GS
GS
GS
GS
GS
GS
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
TEST CONDITIONS
1E-3
1E-4
1E-5
1E-6
1E-7
TYPICAL LET
(MeV/mg/cm)
= 0, I
= V
= 20V, V
= 0, V
= 12V, I
= 12V, I
GS
DS
10
D
= 0V, V
26
37
37
37
37
DS
, I
= 1mA
D
D
D
GAMMA DOT CURRENT TO I
= 160V
DS
= 24A
= 15A
= 1mA
DS
= 0V
= 80% BV
MIN
0.6
30
-
RANGE ( )
TYPICAL
DRAIN SUPPLY (V)
43
36
36
36
36
MIN
200
DSS
1.5
-
-
-
-
TYP
100
.
-
-
V
APPLIED
GS
(V)
-20
-10
-15
-20
0.110
AS
MAX
-5
2.77
100
BIAS
MAX
4.0
25
540
1.8
-
300
ILM = 10A
30A
100A
300A
MAXIMUM
V
(NOTE 6)
DS
UNITS
UNITS
200
200
160
100
(V)
40
nA
ns
BIAS
V
V
V
V
A
1000