JANSR2N7411 Intersil Corporation, JANSR2N7411 Datasheet

JANSR2N7411

Manufacturer Part Number

JANSR2N7411

Description

2.5A/ -100V/ 1.30 Ohm/ Rad Hard/ P-Channel Power MOSFET

Manufacturer

Intersil Corporation

Datasheet

1.JANSR2N7411.pdf (8 pages)

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Download datasheet (46Kb)

Formerly FSL9110R4

June 1998

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

http://www.intersil.com or 407-727-9207

Features

• 2.5A, -100V, r

• Total Dose

• Single Event

• Dose Rate

• Photo Current

• Neutron

Ordering Information

Die Family TA17716.

MIL-PRF-19500/639.

Package

JANSR2N7411

- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm

- Typically Survives 3E9 RAD (Si)/s at 80% BV

- Typically Survives 2E12 if Current Limited to I

- 0.3nA Per-RAD(Si)/s Typically

- Maintain Pre-RAD Speciﬁcations

- Usable to 3E14 Neutrons/cm

PART NUMBER

for 3E13 Neutrons/cm

up to 80% of Rated Breakdown and

of 10V Off-Bias

DS(ON)

TO-205AF

= 1.30

PACKAGE

Intersil Corporation 1999

JANSR2N7411

BRAND

with

DSS

JANSR2N7411

TO-205AF

2-100

Description

The Discrete Products Operation of Intersil Corporationhas

developed a series of Radiation Hardened MOSFETs specif-

ically designed for commercial and military space applica-

tions. Enhanced Power MOSFET immunity to Single Event

Effects (SEE), Single Event Gate Rupture (SEGR) in particu-

lar, is combined with 100K RADS of total dose hardness to

provide devices which are ideally suited to harsh space envi-

ronments. The dose rate and neutron tolerance necessary

for military applications have not been sacriﬁced.

The Intersil portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings.

Numerous packaging options are also available.

This MOSFET is an enhancement-mode silicon-gate power

ﬁeld-effect transistor of the vertical DMOS (VDMOS) struc-

ture. It is specially designed and processed to be radiation

tolerant. The MOSFET is well suited for applications

exposed to radiation environments such as switching regula-

tion, switching converters, motor drives, relay drivers and

drivers for high-power bipolar switching transistors requiring

high speed and low gate drive power. This type can be

operated directly from integrated circuits.

Also available at other radiation and screening levels. See us

on the web, Intersil’s home page: http://www.intersil.com. Con-

tact your local Intersil Sales Ofﬁce for additional information.

Symbol

2.5A, -100V, 1.30 Ohm, Rad Hard,

P-Channel Power MOSFET

File Number

4493

Related parts for JANSR2N7411

JANSR2N7411 Summary of contents

Page 1

... This type can be operated directly from integrated circuits. Also available at other radiation and screening levels. See us BRAND on the web, Intersil’s home page: http://www.intersil.com. Con- tact your local Intersil Sales Ofﬁce for additional information. JANSR2N7411 Symbol TO-205AF © ...

Page 2

... 7 d(OFF -20V V g(TOT -12V g(12 -2V g(TH 2-101 JANSR2N7411 UNITS -100 DS -100 DGR 2.5 D 1 0.12 W/ 7.5 AS 2 -55 to 150 J STG 300 L 1.0 MIN TYP MAX -100 ...

Page 3

... FLUENCE = 1E5 IONS/cm (TYPICAL) -100 -80 -60 -40 -20 o TEMP = (V) GS FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA JANSR2N7411 TEST CONDITIONS 2.5A, dI /dt = 100A Unless Otherwise Speciﬁed C SYMBOL TEST CONDITIONS 1mA DSS ...

Page 4

... FIGURE 5. BASIC GATE CHARGE WAVEFORM 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 - FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE JANSR2N7411 Unless Otherwise Speciﬁed (Continued OPERATION IN THIS AREA MAY BE LIMITED BY r 0.1 100 150 - FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 2.5 PULSE DURATION = 250ms ...

Page 5

... VARY t TO OBTAIN P 50 REQUIRED PEAK 20V GS FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT -12V FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT JANSR2N7411 Unless Otherwise Speciﬁed (Continued (L/R) ln [(I *R) / (1.3 RATED DSS (1.3 RATED STARTING STARTING T = 150 C J ...

Page 6

... Bias (Drain Stress) PDA Final Electrical Tests (Note 9) NOTE: 9. Test limits are identical pre and post burn-in. Additional Screening Tests PARAMETER Safe Operating Area Unclamped Inductive Switching Thermal Response Thermal Impedance JANSR2N7411 Unless Otherwise Speciﬁed SYMBOL TEST CONDITIONS 20V GSS GS ...

Page 7

... Subgroups A2, A3, A4, A5 and A7 Data G. Group B - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups B1, B3, B4, B5 and B6 Data H. Group C - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups C1, C2, C3 and C6 Data I. Group D - Attributes Data Sheet - Hi-Rel Lot Traveler - Pre and Post Radiation Data JANSR2N7411 2-106 ...

Page 8

... For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Ofﬁce Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 JANSR2N7411 SYMBOL MIN A 0.160 Øb 0.016 ØD 0.350 Ø ...

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