MRF9011LT1 Motorola, MRF9011LT1 Datasheet - Page 2

• Manufacturer Part Number: MRF9011LT1
• Description: NPN Silicon High-Frequency Transistor
• Manufacturer: Motorola

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ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
FUNCTIONAL TESTS
SMALL–SIGNAL CHARACTERISTICS
MMBR901LT1, T3 MRF9011LT1
2–2
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Current–Gain — Bandwidth Product
Collector–Base Capacitance
Power Gain at Minimum Noise Figure
Minimum Noise Figure (Figure 3)
Insertion Gain in 50
Minimum Noise Figure (Figure 3)
Output Capacitance
Common–Emitter Amplifier Gain
(I C = 1.0 mAdc, I B = 0)
(I C = 0.1 mAdc, I E = 0)
(I E = 0.1 mAdc, I C = 0)
(V CB = 15 Vdc, I E = 0)
(I C = 5.0 mAdc, V CE = 5.0 Vdc)
(I C = 15 mAdc, V CE = 10 Vdc, f = 1.0 GHz)
(V CB = 10 Vdc, I E = 0, f = 1.0 MHz)
(V CE = 10 Vdc, I C = 5.0 mA, f = 1.0 GHz)
(V CE = 10 Vdc, I C = 5.0 mA, f = 1.0 GHz)
(V CE = 10 Vdc, I C = 5.0 mA, f = 1.0 GHz)
(V CE = 6.0 Vdc, I C = 5.0 mA, f = 1.0 GHz)
(V CE = 10 Vdc, I C = 5.0 mA, f = 1.0 GHz)
(V CB = 10 Vdc, I C = 5.0 mAdc, f = 1.0 GHz)
(V CC = 6.0 Vdc, I C = 5.0 mAdc, f = 1.0 GHz)
System
Characteristic
(T A = 25 C unless otherwise noted)
MMBR901LT1, T3
MRF9011LT1
MRF9011LT1
MRF9011LT1
MRF9011LT1
MRF9011LT1
MRF9011LT1
MMBR901LT1, T3
MMBR901LT1
MMBR901LT1
V (BR)CEO
V (BR)CBO
V (BR)EBO
G NFmin
Symbol
NF min
NF min
I CBO
S 21 2
C obo
G pe
h FE
C cb
f T
Min
2.0
9.0
15
25
50
30
—
—
—
—
—
—
—
—
MOTOROLA RF DEVICE DATA
0.55
13.5
10.2
Typ
3.8
1.8
1.9
80
12
—
—
—
—
—
—
Max
200
200
1.0
1.0
50
—
—
—
—
—
—
—
—
—
nAdc
Unit
GHz
Vdc
Vdc
Vdc
pF
dB
dB
dB
dB
pF
dB
—