MRF9011LT1 Motorola, MRF9011LT1 Datasheet - Page 4

• Manufacturer Part Number: MRF9011LT1
• Description: NPN Silicon High-Frequency Transistor
• Manufacturer: Motorola

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MMBR901LT1, T3 MRF9011LT1
2–4
40
32
24
16
8
0
0
5
4
3
2
1
0.1
0
V CE = 10 Vdc
Z o = 50 OHMS
Figure 6. Gain–Bandwidth Product versus
Figure 4. Gain and Noise Figure
0.2
6
NF
I C , COLLECTOR CURRENT (mA)
versus Frequency
Collector Current
f, FREQUENCY (GHz)
G NF
CIRCUIT USED — SEE FIGURE 3
12
0.5
18
50
40
30
20
10
0
0.1
V CE = 10 Vdc
I C = 5 mA
1
24
Figure 8. Maximum Unilateral Gain
0.2 0.3
2
MRF9011LT1
versus Frequency
30
0.5
f, FREQUENCY (GHz)
5
4
3
2
1
0
G Umax =
16
12
30
24
18
12
1
8
4
0
6
0
0.1
0
(1 – |S 11 | 2 )(1 – |S 22 | 2 )
Figure 7. Insertion Gain versus Frequency
3
Z o = 50 OHMS
2
V CE = 10 Vdc
I C = 5 mA
0.2 0.3
|S 21 | 2
Figure 5. Gain and Noise Figure
3
6
NF
versus Collector Current
I C , COLLECTOR CURRENT (mA)
9
0.5
f, FREQUENCY (GHz)
12
G NF
CIRCUIT USED — SEE FIGURE 3
MOTOROLA RF DEVICE DATA
15
1
18
2
21
Z o = 50 OHMS
V CE = 10 Vdc
I C = 5 mA
3
V CE = 10 Vdc
f = 1 GHz
24
27
30
8
7
6
5
4
3
2
1
0