TIP35C-T3P-K Unisonic Technologies, TIP35C-T3P-K Datasheet - Page 2

• Manufacturer Part Number: TIP35C-T3P-K
• Description: High Power Transistors Npn Silicon Transistor
• Manufacturer: Unisonic Technologies

TIP35C
Collector-Base Voltage (I
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current
Base Current
Total Dissipation (Tc =25 ℃)
Junction Temperature
Storage Temperature
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Thermal Resistance Junction-Case
Collector Cut-off Current (I
Emitter Cut-off Current (I
Collector Cut-off Current (V
Collector-Emitter Sustaining Voltage (I
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
DC Current Gain
Transition Frequency
Small Signal Current Gain
* Pulsed: Pulse Duration = 300 µs, Duty Cycle
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
THERMAL DATA
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
C
PARAMETER
PARAMETER
C
E
= 0)
= 0)
= 0)
B
BE
B
= 0)
= 0)
= 0)
B
= 0) V
SYMBOL
V
≤
V
CEO(SUS)
CE(SAT)
BE(ON)
2 %
I
h
I
I
CEO
EBO
CES
h
FE
f
T
fe
(Tc =25 ℃, unless otherwise specified)
*
*
*
* I
V
V
V
I
I
V
V
V
V
V
V
C
B
B
CE
EB
CE
CE
CE
CE
CE
CE
CE
= 30 mA
= 1.5 A
= 5 A, I
= 5 V
= 60 V
= Rated V
= 4 V, I
= 4 V, I
= 4 V
= 4 V, I
= 10 V, I
= 10 V, I
TEST CONDITIONS
SYMBOL
SYMBOL
V
V
V
T
, I
C
, I
I
θ
P
T
CBO
CEO
EBO
I
CM
I
STG
= 25 A
C
C
C
JC
C
C
C
B
D
J
C
C
= 15 A
= 15 A
= 25 A
= 1.5 A
= 15 A
= 1 A, f = 1 KHz
CEO
= 1 A, f = 1 MHz
NPN SILICON TRANSISTOR
MIN
-65 ~ +150
RATINGS
+150
100
100
125
TYP
25
50
5
5
MIN
100
25
10
25
3
TYP
MAX
1
MAX UNIT
QW-R214-013,A
0.7
1.8
50
1
1
4
2
4
℃ / W
UNIT
UNIT
W
℃
℃
2 of 2
V
V
V
A
A
A
MHz
mA
mA
mA
V
V
V
V
V