TPC8037-H Toshiba, TPC8037-H Datasheet - Page 5

• Manufacturer Part Number: TPC8037-H
• Description: Silicon N-Channel MOS Type
• Manufacturer: Toshiba

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10000
1000
100
0.8
1.6
1.2
0.4
20
16
12
10
−80
8
4
0
2
0
0.1
0
Common source
Pulse test
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
(2)
(1)
V GS = 4.5 V
−40
Drain-source voltage V
Ambient temperature Ta (
Ambient temperature Ta (
40
V GS = 10 V
Capacitance – V
0
1
R
DS (ON)
(1)Device mounted on a glass-epoxy
(2)Device mounted on a glass-epoxy
t=10s
board(a) (Note 2a)
board(b) (Note 2b)
P
D
40
80
– Ta
– Ta
I D = 3,6,12 A
80
10
DS
DS
I D = 3,6,12 A
120
°
(V)
C)
120
°
C)
C oss
C iss
C rss
160
100
160
5
100
0.1
2.5
1.5
0.5
10
50
40
30
20
10
1
0
−80
0
3
2
1
0
0
Common source
I D = 12 A
Ta = 25°C
Pulse test
V DS = 24 V
Common source
V DS = 10 V
I D = 1 mA
Pulse test
12
6
−0.2
10
−40
Drain-source voltage V
Ambient temperature Ta (
5
Total gate charge Q
Dynamic input/output
3
−0.4
10
0
characteristics
I
4.5
DR
V
th
1
−0.6
– V
40
15
– Ta
6
V DD = 24 V
DS
V GS
V GS = 0 V
−0.8
80
20
g
Common source
Ta = 25°C
Pulse test
DS
(nC)
12
°
(V)
TPC8037-H
−1.0
120
C)
25
2008-07-04
−1.2
160
30
20
12
8
4
0
16
−
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