MG100Q2YS65H TOSHIBA Semiconductor CORPORATION, MG100Q2YS65H Datasheet

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MG100Q2YS65H

Manufacturer Part Number
MG100Q2YS65H
Description
Toshiba Semiconductor [TOSHIBA IGBT Module Silicon N Channel IGBT]
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
MG100Q2YS65H
Manufacturer:
TOSHIBA
Quantity:
492
Price:
High Power & High Speed Switching
Applications
·
·
·
Equivalent Circuit
Maximum Ratings
High input impedance
Enhancement-mode
The electrodes are isolated from case.
Collector-emitter voltage
Gate-emitter voltage
Collector current
Forward current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque
C1
Characteristics
G1 E1/C2
Mounting
(Ta = = = = 25°C)
Terminal
E1
1 ms
1 ms
DC
DC
TOSHIBA IGBT Module Silicon N Channel IGBT
MG100Q2YS65H
G2
E2
Symbol
V
V
V
T
I
I
GES
P
CES
I
CP
FM
¾
¾
I
T
Isol
stg
C
F
C
j
E2
(AC 1 minute)
-40 to 125
Rating
1200
2500
±20
100
200
100
200
690
150
3
3
1
Weight: 255 g (typ.)
JEDEC
JEITA
TOSHIBA
N▪m
Unit
°C
°C
W
V
V
A
A
V
2-95A4A
MG100Q2YS65H
2002-10-04
Unit: mm

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MG100Q2YS65H Summary of contents

Page 1

... TOSHIBA Weight: 255 g (typ.) Symbol Rating V 1200 CES ±20 V GES I 100 C I 200 CP I 100 F I 200 FM P 690 C T 150 j -40 to 125 T stg 2500 V Isol (AC 1 minute) ¾ 3 N▪m ¾ MG100Q2YS65H ― ― 2-95A4A Unit °C °C V 2002-10-04 Unit: mm ...

Page 2

... Diode stage Inductive load 600 100 ± off Tc = 125° (off) 2 MG100Q2YS65H Min Typ. Max = 0 ¾ ¾ ±500 = 0 ¾ ¾ 2 ¾ 4.0 7 25°C ¾ 3.0 4 125°C ¾ ¾ 3 MHz ¾ ¾ 8500 ¾ 0.05 ¾ ¾ ¾ 0.05 ¾ ...

Page 3

... Gate-emitter voltage V ( 200 150 100 Collector-emitter voltage Gate-emitter voltage V 200 Common cathode -40°C 150 100 50 125° Forward voltage V 3 MG100Q2YS65H – (sat Common emitter Tc = 125° ( – Common emitter Tc = 125° 200 A 100 ( – 25° (V) F 2002-10-04 ...

Page 4

... 100 ± off t d (on (off) 0.1 0. 100 Common emitter 600 100 ± 25° 125°C 1 100 1 4 MG100Q2YS65H Switching time – (off) t off 25° 125°C 30 100 Collector current I (A) C Switching time – 25° 125° Gate resistance R (9) G Switching loss – R ...

Page 5

... Common emitter MHz Tc = 25°C 100 800 1000 0.01 1000 100 < = 125° ± 9.1 W 0.1 1200 1400 0 200 ( MG100Q2YS65H C – ies C oes Cres 0 100 Collector-emitter voltage V (V) CE Reverse bias SOA 400 600 800 1000 1200 1400 Collector-emitter voltage V (V) CE 2002-10-04 ...

Page 6

... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. MG100Q2YS65H 6 000707EAA 2002-10-04 ...

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