MIG15J503H TOSHIBA Semiconductor CORPORATION, MIG15J503H Datasheet

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MIG15J503H

Manufacturer Part Number
MIG15J503H
Description
TOSHIBA INTELLIGENT POWER MODULE
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
MIG15J503H
Manufacturer:
TOSHIBA
Quantity:
492
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MIG15J503H is an intelligent power module for three-phase
inverter system. The 4th generation low saturation voltage trench
gate IGBT and FRD are connected to a three-phase full bridge
type, and IC by the original high-voltage SOI(silicon-on-insulator)
process drives these directly in response to a PWM signal.
Moreover, since high-voltage level-shifter is built in high-voltage
IC, while being able to perform a direct drive without the
interface with which the upper arm IGBT is insulated, the drive
power supply of an upper arm can be driven with a bootstrap
system, and the simplification of a system is possible.
Furthermore, each lower arm emitter terminal has been
independent so that detection can perform current detection at the time of vector control by current detection
resistance of a lower arm. The protection function builds in Under Voltage Protection, Short Circuit Protection, and
Over Temperature P rotection. Original h igh thermal conduction resin is adopted as a package, and low heat
resistance is realized.
Feature
Since this product is MOS structure, it should be careful of static electricity in the case of handling.
This tentative specification is a development examination stage, and may change the contents without
a preliminary announcement.
The 4th generation trench gate thin wafer NPT IGBT is adopted.
FRD is built in.
The level shift circuit by high-voltage IC is built in.
The simplification of a high side driver power supply is possible by the bootstrap system.
Short Circuit P rotection, Over Temperature Protection , and the Power Supply Under Voltage Protection
function are built in.
Short Circuit Protection and Over Temperature Protection state are outputted.
The lower arm emitter terminal has been independent by each phase for the purpose of the current detection at
the time of vector control.
Low thermal resistance by adoption of original high thermal conduction resin.
M I G 1 5 J 5 0 3 H
TOSHIBA INTELLIGENT POWER MODULE
TOSHIBA CONFIDENTIAL
Weight:18 g (Typ.)
MIG15J503H
2002/12/10
1

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MIG15J503H Summary of contents

Page 1

... TOSHIBA INTELLIGENT POWER MODULE MIG15J503H is an intelligent power module for three-phase inverter system. The 4th generation low saturation voltage trench gate IGBT and FRD are connected to a three-phase full bridge type, and IC by the original high-voltage SOI(silicon-on-insulator) process drives these directly in response to a PWM signal. ...

Page 2

... Pin Assignment PGND PGND PGND Marking SGND Mark side SGND SGND Toshiba logotype • ¦ MIG15J503H JAPAN product number TOSHIBA CONFIDENTIAL MIG15J503H Lot No. 2 2002/12/10 ...

Page 3

... Low Side Driver Over Over Temp Current High Side Under Under Driver Volatge Voltage Low Side Driver Over Over Temp Current High Side Under Under Driver Volatge Voltage Low Side Driver Over Over Temp Current TOSHIBA CONFIDENTIAL MIG15J503H PGND PGND PGND 2002/12/10 ...

Page 4

... U-Phase low -side input pin (Negative logic U-Phase high-side input pin (Negative logic U-Phase Diagnosis output pin(open drain output. Wired or connection can be performed with the Diagnosis output pin of other Phase U-Phase control power supply (+15V typ.) CC Pin Description TOSHIBA CONFIDENTIAL MIG15J503H 4 2002/12/10 ...

Page 5

... Detecting H L Detecting L H Detecting L L Detecting H H Detecting H L Detecting L H Detecting L L TOSHIBA CONFIDENTIAL MIG15J503H ‚h‚f‚a‚s State Fault Output Low Side FO(X) Arm Arm OFF OFF OFF OFF ON OFF ON OFF OFF OFF OFF OFF OFF OFF ...

Page 6

... C) Symbol Rating Unit V 450 (surge) 500 600 V CES I • • 5 • PGND-SGND Dv/dt 20 kV/ƒÊ • [ 20~100 °C OPE T 150 ° • [ 40~125 °C stg V 2500 (1min) Vrms ISO TOSHIBA CONFIDENTIAL MIG15J503H 6 2002/12/10 ...

Page 7

... V, IC• •15A, Inductance Load BB • • ONL • i include each Phase• 300 V, IC• •15A, Inductance Load BB • • daed t V 300 • • F • • rr TOSHIBA CONFIDENTIAL MIG15J503H Min. Typ. Max. Unit 50 300 400 0.8 1 ...

Page 8

... When the overcurrent detection value is set by an actual application necessary to consider the resistance of the internal bonding wire. The resistance of the internal bonding wire is 11m Ħ. (NOTE 3) Switching Waveform H Input Voltage L Rating Current Collector Current V-Phase 15V 5V 23 VCC V PGND FoV R SGND V 19 Timing chart 90% 10 TOSHIBA CONFIDENTIAL MIG15J503H 90% 10 2002/12/10 ...

Page 9

... High Side Driver Under Under Volt Volt age age Low Side Driver Over Over Curre Temp nt High Side Driver Under Under Volt Volt age age Low Side Driver Over Over Curre Temp nt TOSHIBA CONFIDENTIAL MIG15J503H PGND High + voltage PGND PGND 2002/12/10 ...

Page 10

... Package Outline 7• 0 8• 7• 0. • 7• 0. 3.2• 0 0. 5• 0. 8• 0. 0.1 S TOSHIBA CONFIDENTIAL MIG15J503H Unit• 10.5 • 1.25 • • • 2002/12/10 ...

Page 11

... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice. TOSHIBA CONFIDENTIAL MIG15J503H 000707EBA 11 2002/12/10 ...

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